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Machine translation
1. (WO2002027805) A THEORY OF THE CHARGE MULTIPLICATION PROCESS IN AVALANCHE PHOTODIODES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2002/027805    International Application No.:    PCT/US2001/030775
Publication Date: 04.04.2002 International Filing Date: 01.10.2001
Chapter 2 Demand Filed:    26.04.2002    
IPC:
H01L 31/107 (2006.01), H01L 31/18 (2006.01)
Applicants: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM [US/US]; 201 West 7th Street, Austin, TX 78701 (US)
Inventors: CAMPBELL, Joe, C.; (US).
YUAN, Ping; (US)
Agent: Meyertons, Eric, B.; CONLEY, ROSE & TAYON, P.C., P.O. Box 398, Austin, TX 78767-0398 (US)
Priority Data:
60/236,952 29.09.2000 US
Title (EN) A THEORY OF THE CHARGE MULTIPLICATION PROCESS IN AVALANCHE PHOTODIODES
(FR) PHOTODIODES A AVALANCHE COMPORTANT UNE REGION DE MULTIPLICATION REALISEE PAR IONISATION D'IMPACT
Abstract: front page image
(EN)An avalanche photodiode including a multiplication layer is provided. The multiplication layer includes a well region (72, 74) and a barrier region (76, 78, 80). The well region includes a material having a higher carrier ionization probability than a material used to form the barrier region.
(FR)La présente invention concerne une photodiode à avalanche comportant une couche de multiplication. La couche de multiplication peut comprendre une région de puits et une région barrière. La région de puits peut inclure un matériau présentant une probabilité d'ionisation supérieure au matériau utilisé pour former la région barrière.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)