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1. WO2002025736 - A HIGH VOLTAGE SEMICONDUCTOR

Publication Number WO/2002/025736
Publication Date 28.03.2002
International Application No. PCT/SE2001/001953
International Filing Date 13.09.2001
Chapter 2 Demand Filed 21.03.2002
IPC
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
CPC
H01L 23/295
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
293Organic, e.g. plastic
295containing a filler
H01L 23/3192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3157Partial encapsulation or coating
3192Multilayer coating
H01L 29/408
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
408with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2924/13055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
10Details of semiconductor or other solid state devices to be connected
11Device type
13Discrete devices, e.g. 3 terminal devices
1304Transistor
1305Bipolar Junction Transistor [BJT]
13055Insulated gate bipolar transistor [IGBT]
Applicants
  • ABB AB [SE]/[SE] (AllExceptUS)
  • BERNHOFF, Hans [SE]/[SE] (UsOnly)
  • ISBERG, Jan [SE]/[SE] (UsOnly)
  • SKYTT, Per [SE]/[SE] (UsOnly)
  • ISBERG, Peter [SE]/[SE] (UsOnly)
  • IRWIN, Mark [US]/[SE] (UsOnly)
  • ÖNNEBY, Carina [SE]/[SE] (UsOnly)
  • DAHLUND, Mats [SE]/[SE] (UsOnly)
  • MÅTEMSSON, Eva [SE]/[SE] (UsOnly)
Inventors
  • BERNHOFF, Hans
  • ISBERG, Jan
  • SKYTT, Per
  • ISBERG, Peter
  • IRWIN, Mark
  • ÖNNEBY, Carina
  • DAHLUND, Mats
  • MÅTEMSSON, Eva
Agents
  • OLSSON, Jan
Priority Data
0003360-521.09.2000SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A HIGH VOLTAGE SEMICONDUCTOR
(FR) SEMICONDUCTEUR HAUTE TENSION
Abstract
(EN)
A semiconductor device comprises means (7) for grading an electric field created in the active part (4) of the device when a high voltage is applied thereacross. Said means comprises a member (7) being of a material having a higher dielectric constant than the material of said active part and applied next to at least a portion of said active part where a high electric field occurs when a high voltage is applied across the device for obtaining a field grading for a condition of changing of said voltage.
(FR)
L'invention concerne un dispositif à semiconducteur comportant un organe (7) servant à répartir le champ électrique créé dans la partie active (4) du dispositif lorsqu'une tension élevée y est appliquée. Ledit organe comprend un élément (7) constitué d'un matériau dont la constante diélectrique est plus élevée que celle du matériau de ladite partie active, cet élément étant appliqué à côté d'au moins une partie de ladite partie active dans laquelle se crée un champ électrique élevé lorsqu'une tension élevée est appliquée au dispositif pour réaliser une répartition de champ dans le cas de changement de tension.
Also published as
Latest bibliographic data on file with the International Bureau