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1. WO2002025716 - METHOD OF PRODUCING SILICON WAFER AND SILICON WAFER

Publication Number WO/2002/025716
Publication Date 28.03.2002
International Application No. PCT/JP2001/008005
International Filing Date 14.09.2001
Chapter 2 Demand Filed 11.03.2002
IPC
C30B 33/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H01L 21/322 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322to modify their internal properties, e.g. to produce internal imperfections
CPC
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 33/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H01L 21/3225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
322to modify their internal properties, e.g. to produce internal imperfections
3221of silicon bodies, e.g. for gettering
3225Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Applicants
  • SHIN-ETSU HANDOTAI CO.,LTD. [JP]/[JP] (AllExceptUS)
  • TAMATSUKA, Masaro [JP]/[JP] (UsOnly)
  • QU, Wei Feig [CN]/[JP] (UsOnly)
  • KOBAYASHI, Norihiro [JP]/[JP] (UsOnly)
Inventors
  • TAMATSUKA, Masaro
  • QU, Wei Feig
  • KOBAYASHI, Norihiro
Agents
  • YOSHIMIYA, Mikio
Priority Data
2000-28606820.09.2000JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF PRODUCING SILICON WAFER AND SILICON WAFER
(FR) TRANCHE DE SILICIUM ET SON PROCEDE DE FABRICATION
Abstract
(EN)
A method of producing a silicon wafer comprising the steps of growing a nitrogen-doped silicon single-crystal bar having a resistivity of at least 100 $g(V).cm and an initial interstitial oxygen concentration of 10-25 ppma by a CZ method, processing the silicon single-crystal bar into a wafer, and heat-treating the wafer to thereby reduce a residual interstitial oxygen concentration in the wafer to up to 8 ppma; and a method of producing silicon wafer comprising the steps of growing a nitrogen-doped silicon single-crystal bar having a resistivity of at least 100 $g(V).cm and an initial interstitial oxygen concentration of up to 8 ppma by a CZ method, processing the silicon single-crystal bar into a wafer, and heat-treating the wafer to thereby form an oxygen deposition layer on a wafer bulk unit; and a silicon wafer produced by these production methods, whereby forming a high-quality DZ layer and positively providing a DZ-IG wafer capable retaining a high resistivity despite a device production heat treating.
(FR)
Cette invention concerne un procédé de fabrication de tranches de silicium qui consiste à: effectuer un tirage Czochralski d'un barreau de silicium monocristallin de dopé à l'azote dont la résistivité est d'au moins 100 $g(V).cm et la concentration initiale d'oxygène interstitiel de 10-25 ppma; transformer la barre de monocristal de silicium en tranche ; et soumettre la tranche à un traitement thermique afin de réduire la concentration d'oxygène interstitiel résiduel à 8 ppma maximum. L'invention concerne également un procédé de fabrication de tranches de silicium consistant a: procéder à un tirage Czochralski d'un barreau de silicium monocristallin dopé à l'azote dont la résistivité est d'au moins 100 $g(V).cm et la concentration initiale d'oxygène interstitiel de 10-25 ppma; transformer la barre de monocristal de silicium en tranche; et soumettre la tranche à un traitement thermique afin de former une couche de dépôt d'oxygène sur une unité de tranche brute. L'invention concerne enfin une tranche de silicium obtenue par les procédés susmentionnés, avec formation d'une couche DZ de haute qualité et obtention d'une couche DZ-IG capable de conserver une résistivité élevée malgré le traitement thermique.
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