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1. WO2002025695 - TUNABLE FOCUS RING FOR PLASMA PROCESSING

Publication Number WO/2002/025695
Publication Date 28.03.2002
International Application No. PCT/US2001/028318
International Filing Date 12.09.2001
Chapter 2 Demand Filed 21.03.2002
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
CPC
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01J 37/32174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
H01J 37/32642
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32623Mechanical discharge control means
32642Focus rings
Applicants
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • JOHNSON, Wayne, L. [US]/[US] (UsOnly)
Inventors
  • JOHNSON, Wayne, L.
Agents
  • LAZAR, Dale, S.
Priority Data
60/233,62318.09.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TUNABLE FOCUS RING FOR PLASMA PROCESSING
(FR) ANNEAU DE MISE AU POINT REGLABLE POUR TRAITEMENT AU PLASMA
Abstract
(EN)
A focus ring (200) and related assembly for a plasma reactor system (100, 400) for processing a workpiece (176) having an outer edge and an upper surface. The assembly has a focus ring support surface (173) arranged around the workpiece perimeter and a ring electrode (210) arranged atop the focus ring support surface. An insulating focus ring (200) is arranged atop the ring electrode. In one embodiment, a first RF power supply (1890) is electrically connected to the focus ring electrode and a tuning network (220) is arranged between the first RF power supply and the ring electrode. Methods of forming a plasma (130) and processing a workpiece in an optimized way, as well as a plasma reactor system for accomplishing the same, are also disclosed.
(FR)
L'invention concerne un anneau de mise au point (200) et un dispositif associé destinés à un système de réacteur à plasma (100, 400) destiné au traitement d'une pièce (176) comprenant un bord extérieur et une surface supérieure. Ce dispositif comprend une surface de support (173) à anneau de mise au point située autour du périmètre de la pièce et une électrode annulaire (210) située au-dessus de la surface de support de l'anneau de mise au point. Un anneau de mise au point (200) isolant est situé sur l'électrode annulaire. Dans un mode de réalisation, une première alimentation RF (180) est reliée électriquement à l'électrode de l'anneau de mise au point et un réseau de réglage (220) est situé entre la première alimentation RF et l'électrode annulaire. L'invention concerne également des procédés de formation de plasma (130) et de traitement d'une pièce de façon optimale, ainsi qu'un système de réacteur à plasma destiné au traitement d'une pièce de façon optimale.
Also published as
US10378992
Latest bibliographic data on file with the International Bureau