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1. (WO2002023638) AN OPTICALLY ADDRESSED SPIN-POLARISED DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2002/023638 International Application No.: PCT/GB2001/004088
Publication Date: 21.03.2002 International Filing Date: 12.09.2001
Chapter 2 Demand Filed: 08.04.2002
IPC:
H01L 31/00 (2006.01) ,H01L 31/112 (2006.01) ,H01L 43/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
112
characterised by field-effect operation, e.g. junction field-effect photo- transistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
BLAND, James, Anthony, Charles [GB/GB]; GB (UsOnly)
HIROHATA, Atsufumi [JP/GB]; GB (UsOnly)
CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LTD [GB/GB]; The Old Schools Trinity Lane Cambridge CB2 1TS, GB (AllExceptUS)
Inventors:
BLAND, James, Anthony, Charles; GB
HIROHATA, Atsufumi; GB
Agent:
GILL JENNINGS & EVERY; Broadgate House 7 Eldon Street London EC2M 7LH, GB
Priority Data:
0022328.912.09.2000GB
Title (EN) AN OPTICALLY ADDRESSED SPIN-POLARISED DIODE
(FR) DIODE POLARISEE EN SPIN A ADRESSAGE OPTIQUE
Abstract:
(EN) There is provided a spin polarised diode structure including a semiconductor substrate; and at least one ferromagnetic layer. The diode structure is illuminated with circularly polarised light which stimulates a spin polarised current to flow from the semiconductor into the ferromagnetic layers. The magnitude of the spin polarised current is dependent upon the direction of magnetisation of the ferromagnetic layers relative to the helicity of the illuminating light. In multi ferromagnetic layer structures each ferromagnetic layer is separated from the next by a thin layer of electrically conductive non-magnetic material. The direction of magnetisation of each of the ferromagnetic layers can be independently controlled by the application of an external magnetic field. The spin polarised diode structure could be used as memory elements, read heads, magnetic field sensors or as switches.
(FR) L'invention concerne une structure de diode polarisée en spin comportant un substrat semi-conducteur ; et au moins une couche ferromagnétique. La structure de diode est éclairée par une lumière à polarisation circulaire qui stimule un courant polarisé en spin pour qu'il s'écoule du semi-conducteur vers les couches ferromagnétiques. L'intensité du courant polarisé en spin dépend de la direction de magnétisation des couches ferromagnétiques par rapport à l'hélicité de la lumière d'éclairage. Dans des structures multicouches ferromagnétiques, chaque couche ferromagnétique est séparée de la suivante par une fine couche de matériau électriquement conducteur non-magnétique. La direction de magnétisation de chacune des couches ferromagnétiques peut être commandée indépendamment par l'application d'un champ magnétique externe. La structure de diode polarisée en spin peut être utilisée comme éléments de mémoire, têtes de lecture, capteurs de champ magnétique ou comme interrupteurs.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)