Processing

Please wait...

Settings

Settings

Goto Application

1. WO2002023624 - FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION

Publication Number WO/2002/023624
Publication Date 21.03.2002
International Application No. PCT/US2001/028762
International Filing Date 14.09.2001
IPC
H01L 21/762 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
76Making of isolation regions between components
762Dielectric regions
H01L 29/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
CPC
H01L 21/76235
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
76224using trench refilling with dielectric materials
76232of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
76235trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
H01L 29/1033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1025Channel region of field-effect devices
1029of field-effect transistors
1033with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Applicants
  • INFINEON TECHNOLOGIES NORTH AMERICA CORP. [US]/[US]
Inventors
  • THWAITE, Peter
  • BEINTNER, Jochen
Agents
  • BRADEN, Stanton, C.
Priority Data
09/662,69214.09.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION
(FR) TRANSISTOR A EFFET DE CHAMP PERFECTIONNE ET PROCEDE DE FABRICATION CORRESPONDANT
Abstract
(EN)
An Insulated Gate Field Effect Transistor (IGFET), fabricated using Shallow Trench Isolation (STI), has an edge of a channel region of the IGFET which has a curved shape with a controlled radius of curvature so as to reduce the electric field at the edge of the channel region. A method of controlling the shape of the edge of the channel region is to limit the supply of oxygen to the region at the edge of the channel region during the oxidation process when the side walls of the silicon island, in which the transistor will be formed, are initially covered with a layer of silicon oxide.
(FR)
L'invention se rapporte à un transistor à effet de champ à grille isolée (IGFET), fabriqué selon un procédé d'isolement par tranchées peu profondes (STI), dont un bord d'une région de canal présente une forme incurvée ayant un rayon de courbure régulé de manière à réduire le champ électrique au niveau du bord de la région de canal. L'invention se rapporte également à un procédé de régulation de la forme du bord de la région de canal qui permet de limiter l'apport d'oxygène à la région se trouvant au niveau du bord de la région de canal au cours du processus d'oxydation lorsque les parois latérales de l'îlot en silicium dans lequel le transistor doit être formé, sont recouvertes initialement d'une couche d'oxyde de silicium.
Latest bibliographic data on file with the International Bureau