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1. WO2002023594 - APPARATUS AND METHOD FOR REDUCING CONTAMINATION ON THERMALLY PROCESSED SEMICONDUCTOR SUBSTRATES

Publication Number WO/2002/023594
Publication Date 21.03.2002
International Application No. PCT/EP2001/009969
International Filing Date 30.08.2001
Chapter 2 Demand Filed 30.03.2002
IPC
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
C30B 25/08 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
08Reaction chambers; Selection of materials therefor
C30B 31/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
31Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
06by contacting with diffusion material in the gaseous state
10Reaction chambers; Selection of materials therefor
C30B 33/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
C23C 16/4404
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
C30B 25/08
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
08Reaction chambers; Selection of materials therefor
C30B 31/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
31Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
06by contacting with diffusion material in the gaseous state
10Reaction chambers; Selection of materials therefor
C30B 33/005
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
005Oxydation
H01L 21/67098
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
Applicants
  • MATTSON THERMAL PRODUCTS GMBH [DE]/[DE]
  • MATTSON THERMAL PRODUCTS, INC. [US]/[US]
Inventors
  • ROTERS, Georg
  • DIETZ, Christoph
  • CONOR, O'Carrol
  • STROD, Arieh
  • TAOKA, James
  • ZERNICKEL, Dieter
Priority Data
09/663,94615.09.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) APPARATUS AND METHOD FOR REDUCING CONTAMINATION ON THERMALLY PROCESSED SEMICONDUCTOR SUBSTRATES
(FR) APPAREIL ET PROCEDE PERMETTANT DE REDUIRE LA CONTAMINATION SUR DES SUBSTRATS SEMICONDUCTEURS TRAITES THERMIQUEMENT
Abstract
(EN)
In an apparatus and a method for thermal processing semiconductor substrates, such as semiconductor wafers, a reaction chamber for processing each substrate with a reactive gas when the substrate is held within the chamber is provided. At least one element forming part of the chamber or associated with the chamber, and which will contact the reactive gas(es) used for thermal processing, is constructed of a metal that is coated with a silicon or silica-containing layer. The primary silicon or silica-coated metals used are stainless steel or aluminum or an aluminum alloy. It has been found particularly advantageous to coat stainless steel reaction chamber inlet and exhaust flanges and associated tubing with the silicon or silica-containing layer to a coating thickness greater than about 1000Å, and preferably in the range of 1200Å to 4800Å, using a chemical vapor deposition (CVD) process at a temperature in the range of 300-400°C for stainless steel and 200-600° for aluminum. The use of silicon- or silica-coated stainless steel reduces metal corrosion that could occur when the flanges and tubing contact reactive gases, such as steam, and also thereby reduces or eliminates contamination, such as iron and iron oxide contamination, on the semiconductor substrates thermally processed with the reaction gases within the reaction chamber.
(FR)
Dans un appareil destiné au traitement thermique de substrats semiconducteurs, tels que des plaquettes semiconductrices, on utilise une chambre de réaction pour traiter chaque substrat avec un gaz réactif lorsque ce substrat est tenu dans cette chambre. Au moins une partie de formage d'élément de cette chambre ou associée à cette chambre, et qui est mise en contact avec le ou les gaz réactifs utilisés pour le traitement thermique, est constituée de métal revêtu d'une couche contenant du silice ou du silicium. Les métaux primaires revêtus de silice ou de silicium utilisés sont de l'acier inoxydable, de l'aluminium ou un alliage d'aluminium. Il s'est avéré particulièrement intéressant de revêtir l'orifice d'entrée, les joues d'évacuation et les tuyaux associés de la chambre à réaction en acier inoxydable avec une couche de silicium ou de silice sur une épaisseur supérieure à environ 1000Å, et de préférence entre 1200Å et 4800Å, par processus de dépôt chimique en phase vapeur (CVD) à une température comprise entre 300 et 400 °C pour l'acier inoxydable, et entre 200 et 600° pour l'aluminium. L'utilisation d'acier inoxydable revêtu de silicium ou de silice réduit la corrosion du métal qui pourrait survenir lorsque les joues et les tuyaux entrent en contact avec les gaz réactifs, tels que la vapeur, et réduit aussi, voire élimine la contamination, telle que le fer et l'oxyde de fer, sur les substrats semiconducteurs thermiquement traités avec ces gaz de réaction dans la chambre de réaction.
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