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1. WO2002023279 - THERMALLY INDUCED PHASE SWITCH FOR LASER THERMAL PROCESSING

Publication Number WO/2002/023279
Publication Date 21.03.2002
International Application No. PCT/US2001/042075
International Filing Date 07.09.2001
Chapter 2 Demand Filed 05.03.2002
IPC
G03G 5/16 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
5Recording-members for original recording by exposure e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
16Layers for recording by changing the magnetic properties, e.g. for Curie-point-writing
H01L 21/268 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
CPC
G03G 5/16
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
5Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
16Layers for recording by changing the magnetic properties, e.g. for Curie-point-writing
H01L 21/268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
Applicants
  • ULTRATECH STEPPER, INC. [US]/[US]
Inventors
  • HAWRYLUK, Andrew, M.
  • TALWAR, Somit
  • WANG, Yun
  • MARKLE, David, A.
  • THOMPSON, Michael, O.
Agents
  • JONES, Allston, L.
Priority Data
09/659,09411.09.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) THERMALLY INDUCED PHASE SWITCH FOR LASER THERMAL PROCESSING
(FR) COMMUTATION DE PHASE CAUSEE PAR UN PHENOMENE THERMIQUE, SERVANT AU TRAITEMENT THERMIQUE PAR LASER
Abstract
(EN)
A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (Tp). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.
(FR)
La présente invention concerne un procédé, un appareil et un système permettant de commander la quantité de chaleur transférée sur une région de processus (30) d'une pièce à travailler (W), à partir d'une exposition à une impulsion de rayonnement (10) qui peut se présenter sous forme d'un faisceau de balayage (B), par utilisation d'une couche de commutation de phase causée par un phénomène thermique (60). L'appareil selon cette invention est un empilement de films (6) qui présente une couche d'absorption (50) déposée au-dessus de la pièce à travailler, telle qu'une plaquette en silicium. Une partie de la couche d'absorption recouvre la région de processus. La couche d'absorption absorbe un rayonnement et convertit le rayonnement absorbé en chaleur. La couche de commutation de phase peut comprendre une ou plusieurs couches de film mince et peut présenter une couche d'isolation thermique et une couche de transition de phase. Du fait de leur proximité, la partie de la couche de commutation de phase qui recouvre la région de processus présente une température proche de la température de la région de processus. La phase de la couche de commutation de phase varie d'une première phase (solide, par exemple) à une seconde phase (liquide ou vapeur, par exemple) à une température de transition de phase (Tp). Au cours de cette variation de phase, la couche de commutation de phase absorbe de la chaleur, mais ne change pas sensiblement de température, ce qui permet de limiter la température de la couche d'absorption et de la région de processus, du fait qu'elles sont toutes les deux proches de la couche de variation de phase.
Also published as
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