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1. WO2002021648 - TRANSITION METAL-DOPED II-VI HETEROSTRUCTURE WAVEGUIDE LIGHT EMITTER

Publication Number WO/2002/021648
Publication Date 14.03.2002
International Application No. PCT/US2001/028076
International Filing Date 06.09.2001
Chapter 2 Demand Filed 08.04.2002
IPC
H01S 3/0941 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
09Processes or apparatus for excitation, e.g. pumping
091using optical pumping
094by coherent light
0941of a semiconductor laser, e.g. of a laser diode
H01S 3/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
H01S 5/327 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
327in AIIBVI compounds, e.g. ZnCdSe-laser
CPC
H01S 2302/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2302Amplification / lasing wavelength
H01S 3/09415
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
09Processes or apparatus for excitation, e.g. pumping
091using optical pumping
094by coherent light
0941of a laser diode
09415the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
H01S 3/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
H01S 3/1623
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
1601characterised by an active (lasing) ion
162transition metal
1623chromium, e.g. Alexandrite
H01S 3/1628
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
1628characterised by a semiconducting matrix
H01S 5/327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
327in AIIBVI compounds, e.g. ZnCdSe-laser
Applicants
  • WEST VIRGINIA UNIVERSITY [US]/[US] (AllExceptUS)
  • MEEHAN, Kathleen [US]/[US] (UsOnly)
Inventors
  • MEEHAN, Kathleen
Agents
  • DORTENZO, Megan D.
Priority Data
60/230,35906.09.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TRANSITION METAL-DOPED II-VI HETEROSTRUCTURE WAVEGUIDE LIGHT EMITTER
(FR) PHOTOÉMETTEUR DE GUIDE D'ONDES À HÉTÉROSTRUCTURE II-VI DOPÉ PAR UN MÉTAL DE TRANSITION
Abstract
(EN)
A semiconductor laser source including a waveguide structure (100) having an active layer (106) and at least one cladding layer (104, 108), wherein the active layer (106) has a host and a transition metal ion dopant that participates in lasing transitions thereby producing stimulated emission radiation. The at least one cladding layer (104, 108) has a lower index of refraction than the active layer (106) thereby guiding the resulting stimulation emission radiation in the active layer (106).
(FR)
La présente invention concerne une source laser à semi-conducteur comprenant une structure de guide d'ondes (100) comportant une couche active (106) et au moins une couche d'habillage (104, 108). En l'occurrence, la couche active comporte un hôte et un dopant à base d'ions de métaux de transitions, qui participe aux transitions lasers, participant par là-même à la production d'un rayonnement d'émission stimulé. La couche d'habillage considéré (104, 108) se distingue par un indice de réfraction inférieur à celui de la couche active (106) ce qui permet de guider dans la couche active (106) le rayonnement d'émission de stimulation résultant.
Also published as
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