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1. WO2002021213 - NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS FOR SHORT WAVELENGTH IMAGING

Publication Number WO/2002/021213
Publication Date 14.03.2002
International Application No. PCT/US2001/028206
International Filing Date 08.09.2001
Chapter 2 Demand Filed 06.04.2002
IPC
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
CPC
G03F 7/0045
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0045with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
G03F 7/0046
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0046with perfluoro compounds, e.g. for dry lithography
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
Applicants
  • SHIPLEY COMPANY, L.L.C. [US]/[US]
Inventors
  • TAYLOR, Gary, N.
  • BRAINARD, Robert, L.
  • YAMADA, Shintaro
Agents
  • CORLESS, Peter, F.
Priority Data
60/231,47308.09.2000US
60/252,66422.11.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS FOR SHORT WAVELENGTH IMAGING
(FR) NOUVEAUX POLYMERES ET COMPOSITIONS DE PHOTORESINE DESTINES A L'IMAGERIE A COURTES LONGUEURS D'ONDES
Abstract
(EN)
This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.
(FR)
La présente invention concerne des résines et des compositions de photorésine comprenant les résines précitées. L'invention concerne de nouvelles résines renfermant des groupes photoacides instables de déblocage, le fragment acide instable étant substitué par au moins un groupe capteur d'électrons. Les polymères de l'invention sont particulièrement utiles comme composant liant de la résine de résines positives chimiquement amplifiées pouvant être exposées à des longueurs d'ondes courtes telles que des longueurs inférieures à 300 nm et inférieures à 200 nm, et de préférence égales à 157 nm environ. Dans les applications d'imagerie à des longueurs d'ondes aussi courtes, les résines de l'invention présentent une absorbance diminuée du rayonnement de courte longueur d'onde auquel elles sont exposées, tel qu'un rayonnement inférieur à 170 nm, par exemple de 157 nm.
Also published as
Latest bibliographic data on file with the International Bureau