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1. WO2002019338 - MEMORY CELL ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF

Publication Number WO/2002/019338
Publication Date 07.03.2002
International Application No. PCT/EP2001/009901
International Filing Date 28.08.2001
Chapter 2 Demand Filed 27.03.2002
IPC
G11C 11/02 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
G11C 11/15 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
CPC
G11C 11/02
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
G11C 11/15
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01L 27/222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
222Magnetic non-volatile memory structures, e.g. MRAM
Applicants
  • INFINEON TECHNOLOGIES AG [DE]/[DE] (AllExceptUS)
  • MIETHANER, Stefan [DE]/[DE] (UsOnly)
  • SCHWARZL, Siegfried [DE]/[DE] (UsOnly)
  • SAENGER, Annette [DE]/[DE] (UsOnly)
Inventors
  • MIETHANER, Stefan
  • SCHWARZL, Siegfried
  • SAENGER, Annette
Agents
  • CHARLES, Glyn
Priority Data
100 43 159.301.09.2000DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) SPEICHERZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG
(EN) MEMORY CELL ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
(FR) DISPOSITIF A CELLULES MEMOIRE ET SON PROCEDE DE REALISATION
Abstract
(DE)
Speicherzellenanordnung mit einem Speicherzellenfeld, das mindestens eine Lage von magnetoresistiven Speicherbauelementen (11) aufweist, die jeweils an ersten Kontaktierungsleitungen (10) angeschlossen sind, wobei die ersten Kontaktierungsleitungen (10) innerhalb einer ersten dielektrischen Schicht (6) liegen, und an zweite Kontaktierungsleitungen (20; 29; 35) angeschlossen sind, wobei die zweiten Kontaktierungsleitungen (20; 29; 35) innerhalb einer zweiten dielektrischen Schicht (17; 27; 32) liegen, wobei eine Diffusionsbarriereschicht (15; 22; 7; 31) zwischen den ersten Kontaktierungsleitungen (10) und der zweiten dielektrischen Schicht (17; 27; 32) vorgesehen ist.
(EN)
The invention relates to a memory cell arrangement with a memory cell field comprising at least one layer of magnetoresistive memory elements (11) which are connected to first contact lines (10). The first contact lines (10) lie within a first dielectric layer (6) and are connected to second contact lines (20; 29; 35). The second contact lines (20; 29; 35) lie within a second dielectric layer (17; 27; 32). A diffusion barrier layer (15; 22; 7; 31) is arranged between the first contact lines (10) and the second dielectric layer (17; 27; 32).
(FR)
La présente invention concerne un dispositif à cellules mémoire comprenant un champ de cellules mémoire qui présente au moins une couche de composants mémoire magnétorésistifs (11) qui sont respectivement connectés à de premières liaisons de contact (10), les premières liaisons de contact (10) étant disposées à l'intérieur d'une première couche diélectrique (6), et à de secondes liaisons de contact (20; 29; 35), les secondes liaisons de contact (20; 29; 35) étant disposées à l'intérieur d'une seconde couche diélectrique (17; 27; 32). Selon l'invention, une couche barrière de diffusion (15; 22; 7; 31) est disposée entre les premières liaisons de contact (10) et la seconde couche diélectrique (17; 27; 32).
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