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1. WO2002018099 - SLURRY FOR USE WITH FIXED-ABRASIVE POLISHING PADS IN POLISHING SEMICONDUCTOR DEVICE CONDUCTIVE STRUCTURES THAT INCLUDE COPPER AND TUNGSTEN AND POLISHING METHODS

Publication Number WO/2002/018099
Publication Date 07.03.2002
International Application No. PCT/US2001/027155
International Filing Date 30.08.2001
Chapter 2 Demand Filed 18.03.2002
IPC
B24B 37/04 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
04designed for working plane surfaces
C09K 13/00 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/321 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
CPC
B24B 37/0056
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
0056taking regard of the pH-value of lapping agents
B24B 37/04
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • CHOPRA, Dinesh
  • SINHA, Nishant
Agents
  • POWER, Brick, G.
Priority Data
09/651,80830.08.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SLURRY FOR USE WITH FIXED-ABRASIVE POLISHING PADS IN POLISHING SEMICONDUCTOR DEVICE CONDUCTIVE STRUCTURES THAT INCLUDE COPPER AND TUNGSTEN AND POLISHING METHODS
(FR) BARBOTINE POUR TAMPONS A POLIR A ABRASIFS FIXES DE STRUCTURES CONDUCTRICES DE DISPOSITIFS SEMI-CONDUCTEURS COMPRENANT DU CUIVRE ET DU TUNGSTENE, ET PROCEDES DE POLISSAGE ASSOCIES
Abstract
(EN)
A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a fixed-abrasive type polishing pad with a substantially abrasive-free slurry in which copper is removed at a rate that is substantially the same as or faster than a rate at which a material, such as tungsten, of the barrier layer is removed. The slurry is formulated so as to oxidize copper at substantially the same rate as or at a faster rate than a material of the barrier layer is oxidized. Thus, copper and the barrier layer material have substantially the same oxidation energies in the slurry or the oxidation energy of the barrier layer material in the slurry may be greater than that of copper. Systems for substantially polishing copper conductive structures and adjacent barrier structures on semiconductor device structures are also disclosed.
(FR)
L'invention porte sur un procédé permettant de polir presque simultanément une structure conductrice de cuivre et une couche barrière contiguë. Ledit procédé recourt à un tampon à polir à abrasif fixé et a une barbotine sensiblement exempte d'abrasif, ce qui permet d'éroder le cuivre à une vitesse sensiblement égale ou supérieure à celle du tungstène de la couche barrière. La formule de la barbotine permet d'oxyder le cuivre à une vitesse sensiblement égale ou supérieure à celle du matériau de la couche barrière. Ainsi l'énergie d'oxydation de la barbotine pour le cuivre est sensiblement identique à celle pour le matériau de la couche barrière qui peut néanmoins être plus élevée. L'invention porte également sur des procédés permettant de polir presque simultanément des structures conductrices de cuivre et la couche barrière contiguë, formées sur des structures de dispositifs semi-conducteurs.
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