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1. WO2002009206 - ELECTRICALLY PROGRAMMABLE MEMORY ELEMENT

Publication Number WO/2002/009206
Publication Date 31.01.2002
International Application No. PCT/US2001/022550
International Filing Date 23.07.2001
Chapter 2 Demand Filed 21.02.2002
IPC
G11C 11/56 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
H01L 45/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
G11C 11/5678
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5678using amorphous/crystalline phase transition storage elements
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 2013/008
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
008Write by generating heat in the surroundings of the memory material, e.g. thermowrite
G11C 2213/52
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
50Resistive cell structure aspects
52Structure characterized by the electrode material, shape, etc.
H01L 45/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
06based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
Applicants
  • OVONYX, INC. [US]/[US]
Inventors
  • LOWREY, Tyler
  • HUDGENS, Stephen, J.
  • KLERSY, Patrick
Agents
  • SCHLAZER, Philip, H.
Priority Data
09/620,31822.07.2000US
09/677,95703.10.2000US
09/813,36720.03.2001US
09/891,15726.06.2001US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRICALLY PROGRAMMABLE MEMORY ELEMENT
(FR) ELEMENT DE MEMOIRE PROGRAMMABLE ELECTRIQUEMENT
Abstract
(EN) An electrically operated programmable resistance memory element. In one embodiment of the invention the memory element includes an electrical contact having at least a first region (R1) with a first resistivity and a second region (R2) with a second resitivity higher than the first resistivity. The more resistivity second region (R2) is preferably adjacent to the memory material (290). In another embodiment of the invention the memory element includes an electrical contact having a raised portion extending to an end adjacent to the memory material.
(FR) Elément de mémoire possédant une résistance pouvant être programmée électriquement. Dans un mode de réalisation de l'invention, cet élément de mémoire comprend un contact électrique possédant au moins une première zone R1 présentant une première résistivité et une deuxième zone R2 présentant une deuxième résistivité supérieure à la première résistivité. Cette deuxième zone (R2) présentant la résistivité la plus élevée est, de préférence, contiguë au matériau (290) de la mémoire. Dans un autre mode de réalisation, cet élément de mémoire comporte un contact électrique dont une partie surélevée s'étend vers une extrémité contiguë au matériau de la mémoire.
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