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1. WO2002009172 - WORKPIECE HOLDING MECHANISM

Publication Number WO/2002/009172
Publication Date 31.01.2002
International Application No. PCT/JP2001/006420
International Filing Date 26.07.2001
Chapter 2 Demand Filed 19.12.2001
IPC
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
H01J 37/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
20Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
H01J 37/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
H01L 21/68 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68for positioning, orientation or alignment
H01L 21/683 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
C23C 16/4581
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4581characterised by material of construction or surface finish of the means for supporting the substrate
H01J 37/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01J 37/32091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32091the radio frequency energy being capacitively coupled to the plasma
H01J 37/32174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
H01L 21/68
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
68for positioning, orientation or alignment
Applicants
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • HIROSE, Eiji [JP]/[JP] (UsOnly)
Inventors
  • HIROSE, Eiji
Agents
  • SUZUYE, Takehiko
Priority Data
2000-22490526.07.2000JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) WORKPIECE HOLDING MECHANISM
(FR) MECANISME DE BLOCAGE D'UNE PIECE A USINER
Abstract
(EN) A workpiece W holding mechanism which comprises a relay switch (8b) for electrically separating a detection circuit (8) having the function of detecting separation of a protective film of a lower electrode (2) from the DC current component in a high-frequency power supply line and removing the residual charge from a power source line, prevents abnormal discharge by separating the detection circuit (8) from the lower electrode (2)depending on the process condition, detects separation (lifetime) of the protective film of the lower electrode (2) on the basis of the DC component of a plasma discharge by electrical connection with the lower electrode (2) during the plasma processing or the maintenance under the process condition causing no abnormal discharges, or removes electrification of the lower electrode etc. and residual charge.
(FR) L'invention porte sur un mécanisme de blocage d'une pièce (W) à usiner [comportant un commutateur à relais (8b) séparant électriquement un circuit de détection (8) ayant pour fonction de détecter la séparation du film de protection d'une l'électrode inférieure (2) d'avec la composante de courant c.c. dans une ligne d'alimentation à haute fréquence, et d'éliminer la charge résiduelle de la ligne source d'alimentation] qui empêche les décharge anormales du fait de la susdite séparation (8) de l'électrode inférieure (2) en fonction des conditions de processus; détecte la séparation (durée de vie) du film de protection de l'électrode inférieure (2) sur la base de la composante c.c. d'une décharge plasmatique en connectant électriquement l'électrode inférieure (2) pendant le traitement au plasma ou le maintien dans les conditions de processus sans causer de décharge anormale; ou élimine l'électrisation de l'électrode inférieure etc. et la charge résiduelle.
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