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1. (WO2002009151) MAGNETORESISTIVE STRUCTURE

Pub. No.:    WO/2002/009151    International Application No.:    PCT/US2001/022658
Publication Date: Jan 31, 2002 International Filing Date: Jul 18, 2001
IPC: G01R 33/09
G11B 5/39
H01L 21/20
Applicants: MOTOROLA, INC.
Inventors: RAMDANI, Jamal
EISENBEISER, Kurt
DROOPAD, Ravindranath
FINDER, Jeffrey, M.
Title: MAGNETORESISTIVE STRUCTURE
Abstract:
Magnetoresistive materials can be grown overlying a semiconductor substrate (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.