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1. WO2002007317 - FAST SWITCHING INPUT BUFFER

Publication Number WO/2002/007317
Publication Date 24.01.2002
International Application No. PCT/US2001/020818
International Filing Date 29.06.2001
Chapter 2 Demand Filed 28.01.2002
IPC
H03K 19/017 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
01Modifications for accelerating switching
017in field-effect transistor circuits
CPC
H03K 19/01707
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output
01Modifications for accelerating switching
017in field-effect transistor circuits
01707in asynchronous circuits
H03K 19/0175
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output
0175Coupling arrangements; Interface arrangements
Applicants
  • ADVANCED MICRO DEVICES, INC. [US]/[US]
Inventors
  • CLEVELAND, Lee
  • NGUYEN, Kendra
Agents
  • RODDY, Richard, J.
  • WRIGHT Hugh R.
Priority Data
09/616,35714.07.2000US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) FAST SWITCHING INPUT BUFFER
(FR) TAMPON D'ENTREE A COMMUTATION RAPIDE
Abstract
(EN) An input buffer circuit (300) for a semiconductor device that includes a PMOS transistor (306), an NMOS transistor (308), and a pull-up circuit (314). The pull-up circuit (314) applies a voltage to the bulk region of the PMOS transistor (306) causing a positive body effect which causes the absolute value of the voltage threshold of the PMOS transistor (306) to temporally lower when the input buffer (300) switches. This causes the input buffer (300) to switch faster than conventional input buffers. The input buffer (300) is an inverter, NOR, NAND, or other input buffer.
(FR) L'invention concerne un circuit de tampon d'entrée (300) destiné à un dispositif semi-conducteur comprenant un transistor PMOS (306), un transistor NMOS (308), ainsi qu'un circuit d'incursion haute (314). Celui-ci applique une tension à la région de substrat du transistor PMOS (306) entraînant un effet de corps positif faisant baisser, temporairement, la valeur absolue du seuil de tension du transistor PMOS (306), quand le tampon d'entrée (300) commute, contraignant celui-ci (300) de commuter plus rapidement que les tampons d'entrée classiques. Le tampon d'entrée (300) est un inverseur, un NOR, un NAND ou un autre tampon d'entrée.
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