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1. WO2002005355 - LIGHT-RECEIVING DEVICE AND LIGHT-RECEIVING MODULE COMPRISING IT

Publication Number WO/2002/005355
Publication Date 17.01.2002
International Application No. PCT/JP2001/005923
International Filing Date 06.07.2001
Chapter 2 Demand Filed 06.09.2001
IPC
H01L 31/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
H01L 31/103 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
CPC
H01L 31/02005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
02002Arrangements for conducting electric current to or from the device in operations
02005for device characterised by at least one potential jump barrier or surface barrier
H01L 31/103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
Applicants
  • SANYO ELECTRIC CO., LTD [JP]/[JP] (AllExceptUS)
  • TOTTORI SANYO ELECTRIC CO., LTD. [JP]/[JP] (AllExceptUS)
  • NISHIMURA, Susumu [JP]/[JP] (UsOnly)
Inventors
  • NISHIMURA, Susumu
Agents
  • SANO, Shizuo
Priority Data
2000-21019111.07.2000JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT-RECEIVING DEVICE AND LIGHT-RECEIVING MODULE COMPRISING IT
(FR) DISPOSITIF RECEPTEUR DE LUMIERE ET MODULE RECEPTEUR DE LUMIERE COMPRENANT CE DERNIER
Abstract
(EN) A light-receiving device comprises a light-receiving section including a heavily-doped impurity layer of a first conductivity type layer and a heavily-doped impurity layer of a second conductivity type surrounding the layer of the first conductivity layer formed on a lightly-doped substrate of the first conductivity type wherein the heavily-doped impurity layers are arranged in the same direction parallel to the surface of the substrate. Furthermore, a layer having a short carrier lifetime is formed on the rear surface of the substrate. Since the lifetime of carriers generated by unwanted light components arriving at the layer having a short carrier lifetime is shortened, the unwanted light components of long wavelength can be cut sufficiently.
(FR) Un dispositif récepteur de lumière comprend une partie récepteur de lumière comprenant une couche d'impuretés fortement dopée d'une couche d'un premier type de conductivité et une couche d'impuretés fortement dopée d'un deuxième type de conductivité qui entoure la couche du premier type de conductivité formée sur un substrat faiblement dopé du premier type de conductivité ; lesdites couches d'impuretés fortement dopées étant disposées dans le même sens parallèlement à la surface du substrat. En outre, une couche ayant une courte durée de vie du support est formée sur la surface arrière du substrat. Etant donné que la durée de vie des supports générée par les composantes lumineuses arrivant sur la couche ayant une courte durée de vie du support, est réduite, les composantes lumineuses indésirables d'une grande longueur d'onde peuvent être réduites de manière suffisante.
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