A semiconductor inductor and a method for making a semiconductor inductor are provided. An oxide layer (122) disposed over a substrate (100) is etched to form an interconnect metallization trench (130) within the oxide layer (122). The oxide layer (122) is also etched to form a first inductor trench (128) within the oxide layer (122) such that the first inductor trench (128) is defined in an inductor geometry. The oxide layer is then etched to form at least one via in the interconnect metallization trench and a second inductor trench over the first inductor trench in the oxide layer. The second inductor trench also has the inductor geometry. After the oxide layer (122) is etched, the at least one via, the second inductor trench, the interconnect metallization trench and the first inductor trench are filled with copper. The semiconductor inductor is configured to have a low resistance and a high quality factor.