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1. (WO2002005034) RESIST RESIN, CHEMICAL AMPLIFICATION TYPE RESIST, AND METHOD OF FORMING PATTERN WITH THE SAME

Pub. No.:    WO/2002/005034    International Application No.:    PCT/JP2001/005693
Publication Date: Jan 17, 2002 International Filing Date: Jul 2, 2001
IPC: C08G 61/06
C08G 61/08
C08G 61/12
G03F 7/039
H01L 21/312
Applicants: NEC CORPORATION
MAEDA, Katsumi

IWASA, Shigeyuki

NAKANO, Kaichiro

HASEGAWA, Etsuo

Inventors: MAEDA, Katsumi

IWASA, Shigeyuki

NAKANO, Kaichiro

HASEGAWA, Etsuo

Title: RESIST RESIN, CHEMICAL AMPLIFICATION TYPE RESIST, AND METHOD OF FORMING PATTERN WITH THE SAME
Abstract:
A resist resin in which acid-decomposable groups decompose by the action of an acid to increase the solubility of the resin in an aqueous alkali solution, characterized by having in the main chain an alicyclic lactone structure represented by the general formula (1). The resist resin is highly transparent to far-infrared rays having a wavelength of about 220 nm or shorter, has excellent etching resistance, and gives a positive, chemically amplified resist having excellent substrate adhesion. Thus, a fine pattern necessary for semiconductor element production can be formed. (1) (In the formula, Z is an alicyclic hydrocarbon group having a lactone structure.)