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Machine translation
1. (WO2002004233) COMPOSITIONS FOR CLEANING ORGANIC AND PLASMA ETCHED RESIDUES FOR SEMICONDUCTOR DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2002/004233    International Application No.:    PCT/US2001/021713
Publication Date: 17.01.2002 International Filing Date: 10.07.2001
Chapter 2 Demand Filed:    06.02.2002    
IPC:
C09K 13/08 (2006.01)
Applicants: EKC TECHNOLOGY, INC. [US/US]; 2520 Barrington Court Hayward, CA 94545 (US)
Inventors: SMALL, Robert, J.; (US).
PATEL, Bakul, P.; (US).
LEE, Wai Mun; (US).
HOLMES, Douglas; (GB).
DAVIOT, Jerome; (GB).
REID, Christopher; (GB)
Agent: BALANCIA, Victor, N.; Pennie & Edmonds LLP 1155 Avenue of the Americas New York, NY 10036 (US)
Priority Data:
60/217,650 10.07.2000 US
Title (EN) COMPOSITIONS FOR CLEANING ORGANIC AND PLASMA ETCHED RESIDUES FOR SEMICONDUCTOR DEVICES
(FR) COMPOSITIONS POUR ELIMINER DES RESIDUS ORGANIQUES ET DE GRAVURE AU PLASMA POUR DES DISPOSITIFS A SEMI-CONDUCTEURS
Abstract: front page image
(EN)A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
(FR)L'invention porte sur une composition conçue pour décaper le photoresist et éliminer des résidus sur des substrats, et destinée à la gravure à la silice. Cette composition comprend d'environ 0,01 % en poids à environ 10 % en poids d'un ou plusieurs composés de fluorure, d'environ 10 % en poids à environ 95 % en poids d'un sulfoxyde ou solvant de sulfone, et d'environ 20 % en poids à environ 50 % en poids d'eau. La composition peut contenir des inhibiteurs de corrosion, des agents de chélation, des co-solvants, des composés amines basiques, des tensioactifs, des acides et des bases.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)