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1. WO2002003448 - METHOD OF DETERMINATION OF SILICON P-N JUNCTION DEPTH

Publication Number WO/2002/003448
Publication Date 10.01.2002
International Application No. PCT/AM2001/000001
International Filing Date 10.01.2001
IPC
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Applicants
  • AYVAZYAN, Gagik [AM]/[AM]
  • VARDANYAN, Aram [AM]/[AM]
  • MAKARYAN, Gagik [AM]/[AM]
Inventors
  • AYVAZYAN, Gagik
  • VARDANYAN, Aram
  • MAKARYAN, Gagik
Priority Data
P2000006004.07.2000AM
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF DETERMINATION OF SILICON P-N JUNCTION DEPTH
(FR) PROCEDE POUR DETERMINER LA PROFONDEUR D'UNE JONCTION P-N AU SILICIUM
Abstract
(EN) The present invention relates to semiconductor technology. The method comprises the carrying out a silicon surface anodic treatment in volt-static regime of porous silicon formation in P-type silicon before the mechanical opening of the P-N junction, and stopping anodic treatment when anodic current reduces to zero.
(FR) L'invention a trait à la technologie des semi-conducteurs. Le procédé comporte les étapes consistant à : mettre en oeuvre un traitement anodique de surface de silicium sous un régime de tension statique de formation de silicium poreux dans du silicium de type P, avant l'ouverture mécanique de la jonction P-N ; et interrompre le traitement anodique quand le courant anodique atteint zéro.
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