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1. (WO2002001646) HIGH-VOLTAGE DIODE

Pub. No.:    WO/2002/001646    International Application No.:    PCT/DE2001/002366
Publication Date: Jan 3, 2002 International Filing Date: Jun 27, 2001
IPC: H01L 29/32
H01L 29/861
Applicants: INFINEON TECHNOLOGIES AG
MAUDER, Anton
PORST, Alfred
Inventors: MAUDER, Anton
PORST, Alfred
Title: HIGH-VOLTAGE DIODE
Abstract:
The invention relates to a high-voltage diode, wherein the dopant concentration of an anode region (4, 2) and a cathode region (1, 5, 6) is optimized in terms of the basic functions static blocking and conductivity . The dopant concentrations range from 1 x 1017 to 3 x 1018 dopant atoms per cm-3 for the anode emitter (4), especially on its surface 1019 dopant atoms per cm-3 or more for the cathode emitter (6) and approximately 1016 dopant atoms per cm-3 for the blocking function of an anode-side zone (2).