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Machine translation
1. (WO2002001608) METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2002/001608    International Application No.:    PCT/US2001/020409
Publication Date: 03.01.2002 International Filing Date: 27.06.2001
Chapter 2 Demand Filed:    21.01.2002    
IPC:
C30B 25/02 (2006.01), C30B 25/18 (2006.01), H01L 21/20 (2006.01), H01L 21/203 (2006.01), H01L 21/205 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive, Danbury, CT 06810 (US) (AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BY, CA, CF, CG, CH, CI, CM, CN, CU, CY, CZ, DE, DK, EE, ES, FI, FR, GA, GB, GE, GH, GM, GN, GR, GW, HU, IE, IL, IS, IT, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MC, MD, MG, MK, ML, MN, MR, MW, MX, MZ, NE, NL, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, SN, SZ, TD, TG, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZW only).
FLYNN, Jeffrey, S. [US/US]; (US) (For US Only).
BRANDES, George, R. [US/US]; (US) (For US Only).
VAUDO, Robert, P. [US/US]; (US) (For US Only).
KEOGH, David, M. [US/US]; (US) (For US Only).
XU, Xueping [US/US]; (US) (For US Only).
LANDINI, Barbara, E. [US/US]; (US) (For US Only)
Inventors: FLYNN, Jeffrey, S.; (US).
BRANDES, George, R.; (US).
VAUDO, Robert, P.; (US).
KEOGH, David, M.; (US).
XU, Xueping; (US).
LANDINI, Barbara, E.; (US)
Agent: ZITZMANN, Oliver, A., M.; Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810 (US)
Priority Data:
09/605,195 28.06.2000 US
Title (EN) METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
(FR) PROCEDE PERMETTANT D'OBTENIR UNE QUALITE D'EPITAXIE AMELIOREE (ETAT DE SURFACE ET DENSITE PAR DEFAUT) SUR DES SUBSTRATS AUTOPORTEURS EN NITRURE (D'ALUMINIUM, INDIUM, GALLIUM) ((AL, IN, GA)N) POUR DISPOSITIFS OPTO-ELECTRONIQUES ET ELECTRONIQUES
Abstract: front page image
(EN)A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10?5¿, nitrogen source material partial pressure in a range of from about 1 to about 10?3¿ torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.
(FR)L'invention concerne une structure homoépitaxiale de nitrure III-V pour dispositif microélectronique, comprenant une couche épi homoépitaxiale de nitrure III-V sur un substrat en nitrure III-V, par exemple, de type autoporteur. L'invention spécifie diverses techniques de traitement, y compris un procédé de formage d'une couche homoépitaxiale de nitrure III-V sur un substrat en un matériau de nitrure III-V correspondant, consistant à déposer la couche homoépitaxiale de nitrure III-V selon un processus VPE utilisant un matériau source du groupe III et un matériau source azote, dans des conditions impliquant un rapport V/III compris entre environ 1 et environ 10?5¿, une source d'azote sous une pression partielle d'environ 1 à environ 10?3¿ torr, une température de croissance comprise entre environ 500 et environ 1250 °C, et une vitesse de croissance comprise entre environ 0,1 et environ 500 microns par heure. Les structures homoépitaxiales de nitrure III-V de dispositif microélectronique sont généralement employées dans des applications de dispositif telles que UV LED, transistors à mobilité électronique élevée et analogues.
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, HU, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)