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Machine translation
1. (WO2001088517) GAS SENSORS WITH IMPROVED RESISTANCE TO HUMIDITY INTERFERENCE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/088517    International Application No.:    PCT/GB2001/002046
Publication Date: 22.11.2001 International Filing Date: 09.05.2001
Chapter 2 Demand Filed:    07.12.2001    
IPC:
G01N 27/12 (2006.01), G01N 33/00 (2006.01)
Applicants: CAPTEUR SENSORS AND ANALYSERS LIMITED [GB/GB]; 11 Moorbrook Park Didcot Oxfordshire OX11 7HP (GB) (For All Designated States Except US).
WILLIAMS, David, Edward [GB/GB]; (GB) (For US Only).
PRATT, Keith, Francis, Edwin [GB/GB]; (GB) (For US Only).
SMITH, Peter, John [IE/GB]; (GB) (For US Only).
NIEMEYER, Dirk [DE/GB]; (GB) (For US Only)
Inventors: WILLIAMS, David, Edward; (GB).
PRATT, Keith, Francis, Edwin; (GB).
SMITH, Peter, John; (GB).
NIEMEYER, Dirk; (GB)
Agent: SKONE JAMES, R., E.; Gill Jennings & Every Broadgate House 7 Eldon Street London EC2M 7LH (GB)
Priority Data:
0011704.4 15.05.2000 GB
Title (EN) GAS SENSORS WITH IMPROVED RESISTANCE TO HUMIDITY INTERFERENCE
(FR) DETECTEURS DE GAZ PRESENTANT UNE RESISTANCE AMELIOREE AUX INTERFERENCES CAUSEES PAR L'HUMIDITE
Abstract: front page image
(EN)Semiconductor gas-sensitive materials of the formula Cr¿2-x?Ti¿x?O¿3? where 0.05 > x $m(G) 0.0001, and gas sensors formed therefrom.
(FR)L'invention concerne des matériaux semiconducteurs sensibles au gaz, représentés par la formule Cr¿2-x?Ti¿x?O¿3?, dans laquelle 0,05 > x $m(G) 0,0001, ainsi que des détecteurs de gaz produits à partir de ces matériaux.
Designated States: CA, JP, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR).
Publication Language: English (EN)
Filing Language: English (EN)