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1. (WO2001086766) SEMICONDUCTOR OR SOLID-STATE LASER HAVING AN EXTERNAL FIBER CAVITY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/086766 International Application No.: PCT/US2001/005436
Publication Date: 15.11.2001 International Filing Date: 21.02.2001
Chapter 2 Demand Filed: 12.10.2001
IPC:
H01S 5/04 (2006.01) ,H01S 5/14 (2006.01) ,H01S 5/183 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
14
External cavity lasers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
Applicants:
CORNING INCORPORATED [US/US]; 1 Riverfront Plaza Corning, NY 14831, US
Inventors:
KUKSENKOV, Dmitir, V.; US
MINELLY, John, D.; US
ZENTENO, Luis, A.; US
Agent:
AGON, Juliana; Corning Incorporated SP TI 3 1 Corning, NY 14831, US
Priority Data:
09/553,71620.04.2000US
Title (EN) SEMICONDUCTOR OR SOLID-STATE LASER HAVING AN EXTERNAL FIBER CAVITY
(FR) LASER A SEMI-CONDUCTEURS OU A CORPS SOLIDE A CAVITE DE FIBRE EXTERIEURE
Abstract:
(EN) A semiconductor laser having an external cavity including a single-mode optical fiber (40). A Bragg grating (42) is written onto the fiber (40) which defines the end of the optical cavity, selects the lasing wavelength, and discriminates against the lasing of higher-order transverse modes in the multi-mode gain region. The system includes an optically active medium (28) with a mirror (22) attached to a first end, and optics (26) for coupling the multi-mode output from the second end of the active medium into the single-mode fiber (40). The active medium may be optically pumped (32) and may comprise a solid state laser rod or a semiconductor diode.
(FR) Ce laser à semi-conducteurs est pourvu d'une cavité extérieure comprenant une fibre optique mode unique (40). Un réseau de Bragg (42) est inscrit sur la fibre (40) définissant la fin de la cavité optique, sélectionnant la longueur d'onde du lasage et empêchant un lasage modes transversaux plus élevés dans la région de gain multimode. Le système comporte un milieu optiquement actif (28) avec un miroir (22) rattaché à une première extrémité, et des éléments optiques (26) servant à injecter la sortie multimode de la seconde extrémité du milieu actif dans la fibre mode unique (40). Le milieu actif peut être pompé optiquement (32) et peut comprendre un barreau laser à corps solide ou une diode à semi-conducteurs.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
Publication Language: English (EN)
Filing Language: English (EN)