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1. (WO2001086709) SIMPLIFIED METHOD TO PRODUCE NANOPOROUS SILICON-BASED FILMS

Pub. No.:    WO/2001/086709    International Application No.:    PCT/US2001/014385
Publication Date: Nov 15, 2001 International Filing Date: May 4, 2001
IPC: H01L 21/316
Applicants: HONEYWELL INTERNATIONAL INC.
Inventors: WU, Hui-Jung
BRUNGARDT, Lisa
SMITH, Douglas, M.
DRAGE, James, S.
RAMOS, Teresa, A.
Title: SIMPLIFIED METHOD TO PRODUCE NANOPOROUS SILICON-BASED FILMS
Abstract:
An improved nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with novel processes for producing these improved films. The improved films are produced by a process that includes: (a) preparing a silicon-based, precursor composition including a porogen; (b) coating a substrate with the silicon-based precursor to form a film; (c) aging or condensing the film in the presence of water; (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.