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Machine translation
1. (WO2001086708) AMORPHOUS METAL OXIDE GATE DIELECTRIC STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/086708    International Application No.:    PCT/US2001/010002
Publication Date: 15.11.2001 International Filing Date: 28.03.2001
Chapter 2 Demand Filed:    07.12.2001    
IPC:
H01L 21/28 (2006.01), H01L 21/316 (2006.01), H01L 29/51 (2006.01)
Applicants: MOTOROLA, INC. [US/US]; 1303 East Algonquin Road Schaumburg, IL 60196 (US)
Inventors: ALLURI, Prasad, V.; (US).
HANCE, Robert, L.; (US).
NGUYEN, Bich-Yen; (US).
HOBBS, Christopher, C.; (US).
TOBIN, Philip, J.; (US)
Agent: GODDARD, Patricia; Motorola, Inc. Motorola Corporate Law Department 7700 West Parmer Lane TX32/PL02 Austin, TX 78729 (US).
KOCH, William, E.; Motorola, Inc. Intellectual Property Dept. 7700 West Parmer Lane TX 32/PL02 Austin, TX 78729 (US)
Priority Data:
09/567,276 09.05.2000 US
Title (EN) AMORPHOUS METAL OXIDE GATE DIELECTRIC STRUCTURE
(FR) STRUCTURE DE DIELECTRIQUE DE GRILLE EN OXYDE METALLIQUE AMORPHE ET PROCEDE D'UTILISATION
Abstract: front page image
(EN)In accordance with a specific embodiment of the present invention, a method of forming a gate dielectric is disclosed. A semiconductor wafer (34) is placed in a deposition chamber. The semiconductor wafer (34) is heated and a precursor gas is flowed into the chamber. In one embodiment, the precursor comprises a moiety of silicon, oxygen, and a transition metal. In another embodiment, the moiety includes a group 2 metal.
(FR)Spécifiquement, l'invention concerne un procédé de réalisation de diélectrique de grille. Une plaquette en semiconducteur (34) est placée dans une chambre de dépôt, puis chauffée, et un gaz précurseur est ensuite injecté dans la chambre. Selon une variante, le gaz précurseur comprend une fraction de silicium, d'oxygène et de métal de transition. Selon une autre variante, la fraction comprend un métal du groupe 2.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)