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1. WO2001074958 - POLISHING AGENT AND METHOD FOR PRODUCING PLANAR LAYERS

Publication Number WO/2001/074958
Publication Date 11.10.2001
International Application No. PCT/EP2001/003113
International Filing Date 19.03.2001
Chapter 2 Demand Filed 17.09.2001
IPC
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
G
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1
Polishing compositions
02
containing abrasives or grinding agents
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105
After-treatment
C09G 1/02 (2006.01)
C09K 3/14 (2006.01)
H01L 21/3105 (2006.01)
CPC
C09G 1/02
C09K 3/1463
H01L 21/31053
Applicants
  • BAYER AKTIENGESELLSCHAFT [DE/DE]; 51368 Leverkusen, DE (AllExceptUS)
  • VOGT, Kristina [DE/DE]; DE (UsOnly)
  • PANTKE, Dietrich [DE/DE]; DE (UsOnly)
  • PUPPE, Lothar [DE/DE]; DE (UsOnly)
  • KIRCHMEYER, Stephan [DE/DE]; DE (UsOnly)
Inventors
  • VOGT, Kristina; DE
  • PANTKE, Dietrich; DE
  • PUPPE, Lothar; DE
  • KIRCHMEYER, Stephan; DE
Common Representative
  • BAYER AKTIENGESELLSCHAFT; 51368 Leverkusen, DE
Priority Data
100 16 020.431.03.2000DE
100 63 870.821.12.2000DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) POLIERMITTEL UND VERFAHREN ZUR HERSTELLUNG PLANARER SCHICHTEN
(EN) POLISHING AGENT AND METHOD FOR PRODUCING PLANAR LAYERS
(FR) AGENT DE POLISSAGE ET PROCEDE DE REALISATION DE COUCHES PLANAIRES
Abstract
(DE)
Als Poliermittel für das Planarisieren von Siliciumdioxid-Schichten werden SiO2-haltige Slurries eingesetzt. Es wurde gefunden, dass die Slurries beim Polieren von SiO2-Schichten eine höhere Abtragsrate besitzen, wenn die eingesetzten Kieselsole eine bimodale Teilchengrößenverteilung aufweisen.
(EN)
Slurries containing SiO2 are used as a polishing agent for planarizing silicon dioxide layers. It was found that slurries have a higher abrasion rate during the polishing of SiO2 layers if the silica sols used have a bimodal particle size distribution.
(FR)
Selon l'invention, on utilise, comme agent de polissage pour la planarisation de couches de dioxyde de silicium, des pâtes fluides contenant du SiO2. On a trouvé que les pâtes fluides présentent une vitesse d'abrasion plus élevée, lors du polissage de couches de SiO2, si les sols de silice utilisés présentent une distribution des tailles de particules bimodale.
Latest bibliographic data on file with the International Bureau