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1. WO2001071785 - METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL

Publication Number WO/2001/071785
Publication Date 27.09.2001
International Application No. PCT/JP2001/002381
International Filing Date 23.03.2001
IPC
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
C23C 16/22 (2006.01)
C30B 25/02 (2006.01)
CPC
C23C 16/22
C30B 25/02
C30B 29/52
Applicants
  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma Kadoma-shi, Osaka 571-8501, JP (AllExceptUS)
  • KANZAWA, Yoshihiko [JP/JP]; JP (UsOnly)
  • NOZAWA, Katsuya [JP/JP]; JP (UsOnly)
  • SAITOH, Tohru [JP/JP]; JP (UsOnly)
  • KUBO, Minoru [JP/JP]; JP (UsOnly)
Inventors
  • KANZAWA, Yoshihiko; JP
  • NOZAWA, Katsuya; JP
  • SAITOH, Tohru; JP
  • KUBO, Minoru; JP
Agents
  • MAEDA, Hiroshi ; Taihei Bldg., 4-8, Utsubohonmachi 1-chome, Nishi-ku Osaka-shi, Osaka 550-0004, JP
Priority Data
2000-8120123.03.2000JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL
(FR) FABRICATION DE CRISTAL SEMI-CONDUCTEUR
Abstract
(EN)
The surface of an Si wafer (1) is pre-processed, and then an SiGeC layer (2) is formed on the Si wafer (1) by means of an ultrahigh vacuum chemical vapor deposition system (UHV-CVD system). The growth temperature of the SiGeC layer (2) is below 490°C. The material of Si is Si2H6, that of Ge is GeH4, and that of C is SiH3CH3. Therefore the SiGeC layer (2) has a good crystallinity.
(FR)
Après pré-traitement d'une tranche de Si (1), on forme une couche (2) de SiGeC sur la tranche de Si (1) par un procédé de dépôt chimique vide en phase vapeur sous vide extrême (système UHV-CVD). La température de croissance du la couche de SiGeC (2) est inférieure à 490 °C. Le matériau Si est Si2H6, celui de Ge est GeH4, et celui de C est SiH3CH3. Ainsi, la couche de SiGeC (2) possède une bonne cristallinité.
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