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1. WO2001063674 - SUPERMOLECULAR STRUCTURES AND DEVICES MADE FROM SAME

Publication Number WO/2001/063674
Publication Date 30.08.2001
International Application No. PCT/US2001/005595
International Filing Date 22.02.2001
Chapter 2 Demand Filed 17.09.2001
IPC
H01L 29/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/167 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
167further characterised by the doping material
CPC
H01L 29/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
H01L 29/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
167further characterised by the doping material
Y10S 977/70
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
977Nanotechnology
70Nanostructure
Applicants
  • SEMICONDUCTOR RESEARCH CORPORATION [US]/[US] (AllExceptUS)
  • NORTH CAROLINA STATE UNIVERSITY [US]/[US] (AllExceptUS)
  • HERR, Daniel, Joseph, Christian [US]/[US] (UsOnly)
  • ZHIRNOV, Victor, Vladimirovich [RU]/[US] (UsOnly)
Inventors
  • HERR, Daniel, Joseph, Christian
  • ZHIRNOV, Victor, Vladimirovich
Agents
  • PHILLIPS, Steven, B.
Priority Data
09/510,80223.02.2000US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SUPERMOLECULAR STRUCTURES AND DEVICES MADE FROM SAME
(FR) STRUCTURES SUPERMOLECULAIRES ET DISPOSITIFS FABRIQUES A PARTIR DESDITES STRUCTURES
Abstract
(EN) Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules (501, 502, 901, 902, 1501, 1502) within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells (1401) are created. Each bipolar cell can function as a bistable device or an oscillator (1601, 1602, 1603, 1604), depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate (1202, 1503) and contact electrodes (1203, 1402, 1504).
(FR) L'invention concerne des structures supermoléculaires et des dispositifs fabriqués à partir desdites structures. L'invention concerne également des matériaux semi-conducteurs et des dispositifs à semi-conducteurs fabriqués sur la base d'une répartition discrète et contrôlée d'atomes ou de molécules (501, 502, 901, 902, 1501, 1502) à une seule impureté et de leur positionnement dans une matrice hôte de façon à bénéficier des effets de charge unique. Des jonctions pn à une seul impureté et des cellules bipolaires (1401) sont créées. Chaque cellule bipolaire peut fonctionner comme un dispositif ou un oscillateur (1601, 1602, 1603, 1604) bistable en fonction de la température de fonctionnement. Les cellules peuvent être utilisées seules ou en réseau afin de rendre les dispositifs plus efficaces par adjonction d'un substrat d'isolation (1202, 1503) et d'électrodes de contact (1203, 1402, 1504).
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