WO2001061760 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY

Publication Number WO/2001/061760

Publication Date 23.08.2001

International Application No. PCT/JP2001/001072

International Filing Date 15.02.2001

Chapter 2 Demand Filed 06.07.2001

IPC

CPC

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Applicants

MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
IKUTA, Shigeo [JP]/[JP] (UsOnly)

Inventors

IKUTA, Shigeo

Agents

IKEUCHI, Hiroyuki

Priority Data

2000/36121

15.02.2000

Publication Language Japanese (ja)

Filing Language Japanese (JA)

Designated States

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Title

(EN) METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY

(FR) PROCEDE DE FABRICATION D'UN TRANSISTOR A COUCHES MINCES, ET ECRAN A CRISTAUX LIQUIDES

Abstract

(EN) The invention provides a method of manufacturing a thin-film transistor whose semiconductor surfaces are protected. The surfaces of semiconductor formed on a substrate are exposed to ozone-containing water to form oxide on the surfaces. Masks formed for etching and ion implantation are removed with oxide formed at least on exposed semiconductor surfaces.

(FR) L'invention concerne un procédé de fabrication d'un transistor à couches minces, dont les surfaces des semi-conducteurs sont protégées. Les surfaces des semi-conducteurs formés sur un substrat sont exposées à une eau contenant de l'ozone pour former un oxyde sur ces surfaces. Des masques formés pour la gravure et l'implantation ionique sont éliminés avec de l'oxyde formé au moins sur des surfaces exposées de semi-conducteurs.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
334	Multistep processes for the manufacture of devices of the unipolar type
335	Field-effect transistors
336	with an insulated gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
334	Multistep processes for the manufacture of devices of the unipolar type
335	Field-effect transistors
336	with an insulated gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66	Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007	Multistep manufacturing processes
66075	of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227	the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409	Unipolar field-effect transistors
66477	with an insulated gate, i.e. MISFET
66742	Thin film unipolar transistors
6675	Amorphous silicon or polysilicon transistors
66757	Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66	Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007	Multistep manufacturing processes
66075	of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227	the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409	Unipolar field-effect transistors
66477	with an insulated gate, i.e. MISFET
66742	Thin film unipolar transistors
6675	Amorphous silicon or polysilicon transistors
66765	Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66	Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007	Multistep manufacturing processes
66075	of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227	the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409	Unipolar field-effect transistors
66477	with an insulated gate, i.e. MISFET
66742	Thin film unipolar transistors
6675	Amorphous silicon or polysilicon transistors
66757	Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

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1. WO2001061760 - METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY