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1. WO2001061760 - METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY

Publication Number WO/2001/061760
Publication Date 23.08.2001
International Application No. PCT/JP2001/001072
International Filing Date 15.02.2001
Chapter 2 Demand Filed 06.07.2001
IPC
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 29/66757
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
H01L 29/66765
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Applicants
  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • IKUTA, Shigeo [JP]/[JP] (UsOnly)
Inventors
  • IKUTA, Shigeo
Agents
  • IKEUCHI, Hiroyuki
Priority Data
2000/3612115.02.2000JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY
(FR) PROCEDE DE FABRICATION D'UN TRANSISTOR A COUCHES MINCES, ET ECRAN A CRISTAUX LIQUIDES
Abstract
(EN) The invention provides a method of manufacturing a thin-film transistor whose semiconductor surfaces are protected. The surfaces of semiconductor formed on a substrate are exposed to ozone-containing water to form oxide on the surfaces. Masks formed for etching and ion implantation are removed with oxide formed at least on exposed semiconductor surfaces.
(FR) L'invention concerne un procédé de fabrication d'un transistor à couches minces, dont les surfaces des semi-conducteurs sont protégées. Les surfaces des semi-conducteurs formés sur un substrat sont exposées à une eau contenant de l'ozone pour former un oxyde sur ces surfaces. Des masques formés pour la gravure et l'implantation ionique sont éliminés avec de l'oxyde formé au moins sur des surfaces exposées de semi-conducteurs.
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