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1. WO2001061736 - METHOD OF PROCESSING WAFER

Publication Number WO/2001/061736
Publication Date 23.08.2001
International Application No. PCT/JP2001/000941
International Filing Date 09.02.2001
IPC
C23C 16/46 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
C23C 16/463
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
463Cooling of the substrate
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
Applicants
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • SUZUKI, Fujio [JP]/[JP] (UsOnly)
  • SAKAMOTO, Koichi [JP]/[JP] (UsOnly)
  • WANG, Wenling [CN]/[JP] (UsOnly)
  • YASUHARA, Moyuru [JP]/[JP] (UsOnly)
Inventors
  • SUZUKI, Fujio
  • SAKAMOTO, Koichi
  • WANG, Wenling
  • YASUHARA, Moyuru
Agents
  • YOSHITAKE, Kenji
Priority Data
2000-4102118.02.2000JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF PROCESSING WAFER
(FR) PROCEDE DE TRAITEMENT D'UNE PLAQUETTE
Abstract
(EN)
Wafers (W) are horizontally placed with gaps in between in a wafer port 11 of a reactor (1) of double pipe structure. Zones (6a, 6b, 6c) in the reactor (1) are heated to a first process temperature, for example, 770 degrees C, by respective heating parts (4a, 4b, 4c) of a heater (4). Source gas is then introduced to perform deposition while cooling the zones (6a, 6b, 6c) to a second process temperature lower than the first process temperature, for example, 750 degrees C. By repeating the process of raising the zones (6a, 6b, 6c) to the first process temperature and the process of introducing source gas while cooling to the second process temperature, deposition is performed with wafer edges being lower in temperature than the central part of the wafer (W), improving the uniformity of film thickness on the wafer. The optimized deposition in each zone can be attained by setting the respective rates of decrease in temperature for the zones (6a, 6b, 6c).
(FR)
Le procédé de l'invention consiste à placer horizontalement des plaquettes (W), en laissant entre chacune un espace, sur un support de plaquettes (11) d'un réacteur (1) à structure à deux conduites, à chauffer des zones (6a, 6b, 6c) du réacteur (1) pour les porter à une première température de traitement, par exemple 770 °C, au moyen de parties chauffantes correspondantes (4a, 4b, 4c) d'un système chauffant (4), à introduire ensuite un gaz source, de manière à exécuter un dépôt tout en refroidissant les zones (6a, 6b, 6c) pour les porter à une seconde température de traitement, inférieure à la première, par exemple 750 °C. En répétant le processus d'élévation des zones (6a, 6b, 6c) à une première température de traitement et le processus d'introduction d'un gaz source, tout en refroidissant ces zones pour les porter à une seconde température de traitement, le dépôt se produit étant donné que les bords d'une plaquette ont une température plus basse que la partie centrale de la plaquette (W), ce qui améliore l'uniformité de l'épaisseur du film sur la plaquette. On obtient un dépôt optimisé dans chaque zone en réglant les taux d'abaissement de la température dans les zones (6a, 6b, 6c).
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