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1. WO2001059817 - METHOD FOR TREATING A DIAMOND SURFACE AND CORRESPONDING DIAMOND SURFACE

Publication Number WO/2001/059817
Publication Date 16.08.2001
International Application No. PCT/FR2001/000360
International Filing Date 07.02.2001
Chapter 2 Demand Filed 07.09.2001
IPC
H01L 21/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
CPC
H01L 21/0415
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0405the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
041Making n- or p-doped regions
0415using ion implantation
H01L 21/043
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0405the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
0425Making electrodes
043Ohmic electrodes
Y10T 428/24917
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
24Structurally defined web or sheet [e.g., overall dimension, etc.]
24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
24917including metal layer
Y10T 428/30
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
30Self-sustaining carbon mass or layer with impregnant or other layer
Y10T 428/31678
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
31504Composite [nonstructural laminate]
31678Of metal
Applicants
  • UNIVERSITE PIERRE ET MARIE CURIE [FR]/[FR] (AllExceptUS)
  • BRIAND, Jean-Pierre [FR]/[FR] (UsOnly)
  • BECHU, Nicolas [FR]/[FR] (UsOnly)
  • GICQUEL, Alix [FR]/[FR] (UsOnly)
  • ACHARD, Jocelyn [FR]/[FR] (UsOnly)
Inventors
  • BRIAND, Jean-Pierre
  • BECHU, Nicolas
  • GICQUEL, Alix
  • ACHARD, Jocelyn
Agents
  • MICHELET, Alain
Priority Data
00/0160409.02.2000FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR TREATING A DIAMOND SURFACE AND CORRESPONDING DIAMOND SURFACE
(FR) PROCEDE DE TRAITEMENT D'UNE SURFACE DE DIAMANT ET SURFACE DE DIAMANT CORRESPONDANTE
Abstract
(EN)
The invention concerns a method for treating a surface and a corresponding diamond surface (5A). The method consists in producing ions each having at least three positive charges and in emitting a beam of said ions towards a diamond surface, so as to make at least one surface zone conductive under the effect of the ions. Advantageously, conductive islands (6) are thus formed having a diameter less than 150 nm, which are then preferably used as reservoir for an electron (having a diameter less than 10 nm) or as reservoirs for re-powering cold cathodes. The invention is applicable to microelectronics and for making cold cathodes.
(FR)
L'invention est relative à un procédé de traitement d'une surface et à une surface de diamant (5A) correspondante. Selon le procédé, on produit des ions ayant chacun au moins trois charges positives et on envoie un faisceau de ces ions vers une surface de diamant, de façon à rendre conductrice au moins une zone de la surface sous l'effet des ions. Avantageusement, on forme ainsi des îlots conducteurs (6) ayant un diamètre inférieur à 150 nm, qu'on utilise ensuite préférentiellement comme réservoirs à un électron (diamètre inférieur à 10 nm) ou comme réservoirs de réalimentation de cathodes froides. Application à la microélectronique et à la fabrication de cathodes froides.
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