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1. WO2001057974 - SEMICONDUCTOR DIODE LASERS WITH IMPROVED BEAM DIVERGENCE PRIORITY

Publication Number WO/2001/057974
Publication Date 09.08.2001
International Application No. PCT/US2001/001971
International Filing Date 19.01.2001
Chapter 2 Demand Filed 16.08.2001
IPC
H01S 5/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
H01S 5/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
CPC
H01S 2301/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
18Semiconductor lasers with special structural design for influencing the near- or far-field
H01S 5/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
H01S 5/2004
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2004Confining in the direction perpendicular to the layer structure
H01S 5/3211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
3211characterised by special cladding layers, e.g. details on band-discontinuities
Applicants
  • PRINCETON LIGHTWAVE INC. [US]/[US]
Inventors
  • GARBUZOV, Dimitri, Z.
  • KHALFIN, Viktor, B.
  • CONNOLLY, John, C.
Agents
  • PLEVY, Arthur, L.
Priority Data
09/553,55120.04.2000US
60/176,90920.01.2000US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DIODE LASERS WITH IMPROVED BEAM DIVERGENCE PRIORITY
(FR) LASERS A DIODE A SEMI-CONDUCTEURS DOTES D'UNE PRIORITE DE DIVERGENCE AMELIOREE
Abstract
(EN) A semiconductor diode laser has a characteristic output with a single mode vertical farfield divergence. The semiconductor diode laser includes a waveguide (103) with a first refractive index and a quantum well (104) embedded in the center of the waveguide. On one side of the waveguide (103) sits a p-type cladding layer (105) with a second refractive index smaller than the first refractive index. On the other side of the waveguide (103) sits an n-type cladding layer (102) with a third refractive index smaller than the first refractive index and larger than the second refractive index.
(FR) L'invention concerne un laser à diode à semi-conducteurs dont la sortie caractéristique est dotée d'une divergence de champ lointain à un seul mode vertical. Le laser à diode à semi-conducteurs comprend un guide d'ondes (103) pourvu d'un premier indice de réfraction et d'un puits quantique (104) enchâssé au centre dudit guide d'ondes. Sur l'un des côtés du guide d'ondes (103), on peut trouver une couche de métallisation (105) de type P, dotée d'un second indice de réfraction inférieur au premier. Sur un autre côté du guide d'ondes (103), on trouve une couche de métallisation (102) de type N, pourvue d'un troisième indice de réfraction inférieur au premier et supérieur au second indice de réfraction.
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