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1. WO2001057915 - TRENCHED SCHOTTKY RECTIFIERS

Publication Number WO/2001/057915
Publication Date 09.08.2001
International Application No. PCT/EP2001/000657
International Filing Date 22.01.2001
IPC
H01L 29/872 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
CPC
H01L 29/407
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
402Field plates
407Recessed field plates, e.g. trench field plates, buried field plates
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
H01L 29/8725
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
8725of the trench MOS barrier type [TMBS]
Applicants
  • KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL]/[NL]
Inventors
  • HIJZEN, Erwin, A.
  • HUETING, Raymond, J., E.
Agents
  • STEVENS, Brian, T.
Priority Data
0002235.002.02.2000GB
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) TRENCHED SCHOTTKY RECTIFIERS
(FR) REDRESSEURS SCHOTTKY A TRANCHEES
Abstract
(EN) Inner trenches (11) of a trenched Schottky rectifier (1a; 1b; 1c; 1d) bound a plurality of rectifier areas (43a) where the Schottky electrode (3) forms a Schottky barrier 43 with a drift region (4). A perimeter trench (18) extends around the outer perimeter of the plurality of rectifier areas (43a). These trenches (11, 18) accommodate respective inner field-electrodes (31) and a perimeter field-electrode (38) that are connected to the Schottky electrode (3). The inner field-electrodes (11) are capacitively coupled to the drift region (4) via dielectric material (21) that lines the inner trenches (11). The perimeter field-electrode (38) is capacitively coupled across dielectric material (28) on the inside wall (18a) of the perimeter trench 18, without acting on any outside wall (18b). Furthermore, the inner and perimeter trenches (11, 18) are closely spaced and the intermediate areas (4a, 4b) of the drift region (4) are lowly doped. The spacing is so close and the doping is so low that the depletion layer (40) formed in the drift region (4), from the Schottky barrier (43) and from the field-relief regions (31,21; 38,28) in the blocking state of the rectifier, may deplete the whole of the intermediate areas (4a, 4b) between the trenches (11, 18) at a blocking voltage just below the breakdown voltage. This arrangement reduces the risk of premature breakdown that can occur at high field points in the depletion layer (40), especially at the perimeter of the array of rectifier areas (43a).
(FR) Des tranchées intérieures (11) d'un redresseur Schottky à tranchées (1a ; 1b ; 1c ; 1d) bornent une pluralité d'aires redresseuses (43a) où l'électrode Schottky (3) forme une barrière Schottky (43) avec une région de dérive (4). Une tranchée de périmètre (18) s'étend autour du périmètre extérieur de la pluralité d'aires redresseuses (43a). Ces tranchées (11, 18) reçoivent respectivement des électrodes de champ intérieures (31) et une électrode de champ du périmètre (38) qui sont connectées à l'électrode Schottky (3). Les électrodes de champ intérieures sont couplées de manière capacitive à la région de dérive (4), via un matériau diélectrique (21), qui relie les tranchées intérieures (11). L'électrode de champ (38) du périmètre est couplée de manière capacitive, au travers d'un matériau diélectrique (28), sur la paroi intérieure (18a) de la tranchée de périmètre (18), sans agir sur une quelconque paroi extérieure (18b). En outre, les tranchées intérieures et de périmètre 11, 18) sont étroitement espacées, et les aires intermédiaires (4a, 4b) de la région de dérive (4) sont faiblement dopées. L'espacement est si étroit et le dopage si faible que la couche à appauvrissement (40) formée dans la région de dérive (4), à partir de la barrière Schottky (43) et des régions de délestage de champ (31, 21 ; 38, 28) dans l'état de blocage du redresseur, peut appauvrir la totalité des aires intermédiaires (4a, 4b) entre les tranchées (11, 18) à une tension de blocage juste inférieure à la tension de rupture. Cet agencement réduit le risque de défaillance prématurée pouvant se produire en des points à champ élevé dans la couche d'appauvrissement (40), notamment dans le périmètre du groupement des zones redresseuses (43a).
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