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1. WO2001056088 - LIGHT EMITTING DIODE AND SEMICONDUCTOR LASER

Publication Number WO/2001/056088
Publication Date 02.08.2001
International Application No. PCT/JP2001/000465
International Filing Date 24.01.2001
Chapter 2 Demand Filed 09.07.2001
IPC
H01L 21/363 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363using physical deposition, e.g. vacuum deposition, sputtering
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/28 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
28containing only elements of group II and group VI of the periodic system
H01L 33/42 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
H01S 5/327 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
327in AIIBVI compounds, e.g. ZnCdSe-laser
H01S 5/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
CPC
H01L 33/0087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0083for devices with an active region comprising only II-VI compounds
0087with a substrate not being a II-VI compound
H01L 33/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
H01L 33/285
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
28containing only elements of group II and group VI of the periodic system
285characterised by the doping materials
H01S 2302/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2302Amplification / lasing wavelength
H01S 5/327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
327in AIIBVI compounds, e.g. ZnCdSe-laser
Applicants
  • JAPAN SCIENCE AND TECHNOLOGY CORPORATION [JP]/[JP] (AT, BE, CA, CH, CN, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, KR, LU, MC, NL, PT, SE, SG, TR)
  • HOSONO, Hideo [JP]/[JP] (UsOnly)
  • OTA, Hiromichi [JP]/[JP]
  • ORITA, Masahiro [JP]/[JP]
  • KAWAMURA, Kenichi [JP]/[JP] (UsOnly)
  • SARUKURA, Nobuhiko [JP]/[JP] (UsOnly)
  • HIRANO, Masahiro [JP]/[JP] (UsOnly)
Inventors
  • HOSONO, Hideo
  • OTA, Hiromichi
  • ORITA, Masahiro
  • KAWAMURA, Kenichi
  • SARUKURA, Nobuhiko
  • HIRANO, Masahiro
Agents
  • NISHI, Yoshiyuki
Priority Data
2000-2484328.01.2000JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT EMITTING DIODE AND SEMICONDUCTOR LASER
(FR) DIODE ELECTROLUMINESCENTE ET LASER A SEMICONDUCTEUR
Abstract
(EN)
It has been confirmed that an n type ZnO film formed on an SrCu2O2 film will produce diode characteristics, without light emitting from a diode confirmed. A semiconductor ultraviolet luminous element characterized by comprising a p-n junction formed by laminating one of p-type semiconductors, respectively consisting of SrCu2O2, CuAlO2 or CuGaO2, on an n-type ZnO layer laminated on a transparent substrate and indicating luminous characteristics. The transparent substrate is preferably a single crystal substrate, especially, yttria partially stabilized zirconia (YSZ) (111) substrate flattened in an atomic state. An n-type ZnO film is formed on a transparent substrate at a substrate temperature of 200-1200°C, and a p-type semiconductor layer consisting of SrCu2O2, CuAlO2 or CuGaO2 is further formed on the film. It may also be possible to form an n-type ZnO film, without heating a substrate, and irradiate the surface of the ZnO film with ultraviolet light to promote crystallization.
(FR)
Il a été confirmé qu'un film ZnO du type n formé sur un film SrCu2O2 produit des caractéristiques de diode, sans toutefois que l'émission de lumière par ladite diode ne soit confirmée. L'invention concerne donc un élément lumineux ultraviolet à semiconducteur caractérisé en ce qu'il comprend une jonction p-n formée par stratification de l'un des semiconducteurs du type p, constitués respectivement de SrCu2O2, CuAlO2 ou de CuGaO2, sur une couche ZnO du type n formée sur un substrat transparent, et en ce qu'il possède des caractéristiques lumineuses. Le substrat transparent est, de préférence, un substrat monocristallin, notamment un substrat de zircone partiellement stabilisé à l'yttria aplati dans un état atomique. Un film ZnO du type n est formé sur un substrat transparent à une température de 200-1200 °C, et une couche de semiconducteur du type p constituée de SrCu2O2, CuAlO2 ou de CuGaO2, est formée sur ledit film. Il est également possible de former un film ZnO du type n, sans chauffer le substrat, et de soumettre la surface du film ZnO au rayonnement d'une lumière ultraviolette pour favoriser la cristallisation.
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