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1. WO2001056087 - MEMORY CELL STRUCTURE INTEGRATED ON SEMICONDUCTOR

Publication Number WO/2001/056087
Publication Date 02.08.2001
International Application No. PCT/EP2000/008529
International Filing Date 31.08.2000
Chapter 2 Demand Filed 31.07.2001
IPC
H01L 29/788 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
788with floating gate
H01L 29/792 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistor
CPC
H01L 29/7882
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
7881Programmable transistors with only two possible levels of programmation
7882charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
H01L 29/792
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistors
Applicants
  • STMICROELECTRONICS S.R.L. [IT]/[IT] (AllExceptUS)
  • LOMBARDO, Salvatore [IT]/[IT] (UsOnly)
  • GERARDI, Cosimo [IT]/[IT] (UsOnly)
  • CRUPI, Isodiana [IT]/[IT] (UsOnly)
  • MELANOTTE, Massimo [IT]/[IT] (UsOnly)
Inventors
  • LOMBARDO, Salvatore
  • GERARDI, Cosimo
  • CRUPI, Isodiana
  • MELANOTTE, Massimo
Agents
  • BOTTI, Mario
Priority Data
00830060.028.01.2000EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MEMORY CELL STRUCTURE INTEGRATED ON SEMICONDUCTOR
(FR) STRUCTURE CELLULAIRE DE MEMOIRE INTEGREE A UN SEMI-CONDUCTEUR
Abstract
(EN)
This invention relates to a memory cell which comprises a capacitor having a first electrode and a second electrode separated by a dielectric layer. Such dielectric layer comprises a layer of a semi-insulating material which is fully enveloped by an insulating material and in which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the first or to the second electrode, depending on the electric field between the electrodes, thereby defining different logic levels.
(FR)
L'invention concerne une cellule de mémoire qui comprend un condensateur doté de première et seconde électrodes séparées par une couche diélectrique. Une telle couche diélectrique comprend une couche de matériau semi-isolateur qui est complètement enveloppée par un matériau d'isolation et dans laquelle une charge électrique est présente en permanence ou y est piégée. Une telle charge électrique est accumulée à proximité de la première ou seconde électrode, en fonction du champ électrique entre les électrodes, ce qui permet de définir des niveaux logiques différents.
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