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1. (WO2001054163) SHAPED AND LOW DENSITY FOCUSED ION BEAMS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/054163 International Application No.: PCT/EP2001/000621
Publication Date: 26.07.2001 International Filing Date: 19.01.2001
IPC:
H01J 37/30 (2006.01) ,H01J 37/305 (2006.01) ,H01J 37/317 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
305
for casting, melting, evaporating, or etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Applicants:
KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL
FEI COMPANY [US/US]; 7451 NW Evergreen Parkway Hillsboro, OR 97124-5830, US
Inventors:
GERLACH, Robert, L.; US
UTLAUT, Mark, W.; US
TESCH, Paul, P.; US
YOUNG, Richard, J.; US
CHANDLER, Clive, D.; US
VAN DER MAST, Karl, D.; US
Agent:
BAKKER, Hendrik; Internationaal Octrooibureau B.V. Prof. Holstlaan 6 NL-5656 AA Eindhoven, NL
Priority Data:
60/177,51821.01.2000US
Title (EN) SHAPED AND LOW DENSITY FOCUSED ION BEAMS
(FR) FAISCEAUX IONIQUES FOCALISES MODELES ET A FAIBLE DENSITE
Abstract:
(EN) A method and apparatus for providing a shaped ion beam having low current density and sharp edges for inducing a reaction between a working material supplied to a target and the target to deposit or remove material. The low current density and sharp edges eliminate the problem of overmilling, while permitting rapid ion beam processing. One method of producing the shaped beam is by using a two lens system, the first lens imaging the source onto the plane of the second lens and the second lens forming an image of the aperture onto the target plane. Another method is to greatly underfocus a chromatic aberration limited beam. Large beams having uniform current density and sharp edges can be produced. A knife edge beam, having a sharp edge can also be produced.
(FR) L'invention concerne un procédé et un appareil permettant de produire un faisceau ionique modelé présentant une faible densité de courant et des angles vifs afin d'induire une réaction entre un matériau actif apporté à une cible et la cible et de déposer ou de supprimer ainsi ce matériau. La faible densité de courant et les angles vifs résolvent les problèmes de fraisage excessif, tout en permettant un traitement rapide au faisceau ionique. Un procédé de production du faisceau modelé consiste à utiliser un système à deux lentilles, la première permettant de mettre la source en image sur le plan de la seconde et la seconde permettant de former une image de l'ouverture sur le plan de la cible. Un autre procédé consiste à sous-focaliser fortement un faisceau limité présentant une aberration chromatique. On peut ainsi obtenir de grands faisceaux présentant une densité de courant uniforme et des angles vifs. On peut également obtenir un faisceau en lame de couteau ayant un angle vif.
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Designated States: JP
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
Publication Language: English (EN)
Filing Language: English (EN)