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1. WO2001042996 - DESIGN OF PHOTOMASKS FOR SEMICONDUCTOR DEVICE FABRICATION

Publication Number WO/2001/042996
Publication Date 14.06.2001
International Application No. PCT/US2000/033146
International Filing Date 06.12.2000
Chapter 2 Demand Filed 11.07.2001
IPC
G03F 1/00 2012.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F 1/36 2012.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction design processes
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 1/36
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/70441
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
70441Optical proximity correction
Applicants
  • INFINEON TECHNOLOGIES NORTH AMERICA CORP. [US]/[US]
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
Inventors
  • MANSFIELD, Scott, M.
  • LIEBMANN, Lars, W.
  • BUTT, Shahid
  • HAFFNER, Henning
Agents
  • BRADEN, Stanton, C.
  • EPPING - HERMANN & FISCHER
Priority Data
09/460,03413.12.1999US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) DESIGN OF PHOTOMASKS FOR SEMICONDUCTOR DEVICE FABRICATION
(FR) FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEUR A L'AIDE D'UN PHOTOMASQUE DOTE DE BARRES D'ASSISTANCE
Abstract
(EN) A semiconductor device can be fabricated using a photomask that has been modified using an assist feature design method based on normalized feature spacing. Before the device can be fabricated, a layout of original shapes is designed (402). For at least some of the original shapes, the width of the shape and a distance to at least one neighboring shape are measured (404). A modified shape can then be generated by moving edges of the original shape based on the width and distance measurements (406). This modification can be performed on some or all of the original shapes (408). For each of the modified shapes, a normalized space and correct number of assist features can be computed (410). The layout is then modified by adding the correct number of assist features in a space between the modified shape and the neighboring shape (412). This modified layout can then be used in producing a photomask, which can in turn be used to produce a semiconductor device.
(FR) Dispositif à semi-conducteur fabriqué à l'aide d'un photomasque qui a été modifié à l'aide d'un procédé de conception de barres d'assistance basé sur l'espacement normalisé des barres. Avant la fabrication du dispositif, une topologie des formes initiales est créée (402). Pour au moins certaines des formes initiales, la largeur de la forme et une distance par rapport à au moins une forme voisine sont mesurées. Une forme modifiée peut alors être produite par déplacement des bords de la forme initiale sur la base des mesures (406) de largeur et de distance. Cette modification peut être effectuée sur certaines seulement ou sur toutes les formes initiales (408). Pour chacune des formes modifiées, un espace normalisé et un nombre correct de barres d'assistance peuvent être calculés (410). La topologie est ensuite modifiée par ajout du nombre correct de barres d'assistance dans un espace situé entre la forme modifiée et la forme voisine (412). Cette topologie modifiée peut alors être utilisée pour produire un photomasque qui peut, à son tour, être utilisé pour produire un dispositif à semi-conducteur.
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