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1. (WO2001039283) SUPERCONDUCTING SUBSTRATE STRUCTURE AND A METHOD OF PRODUCING SUCH STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/039283 International Application No.: PCT/SE2000/002260
Publication Date: 31.05.2001 International Filing Date: 17.11.2000
Chapter 2 Demand Filed: 12.06.2001
IPC:
H01L 39/14 (2006.01) ,H01L 39/24 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
14
Permanent superconductor devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
24
Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group H01L39/135
Applicants:
TELEFONAKTIEBOLAGET LM ERICSSON (publ) [SE/SE]; S-126 25 Stockholm, SE
Inventors:
CLAESON, Tord; SE
IVANOV, Zdravko; SE
WIKBORG, Erland; SE
Agent:
BERGENTALL, Annika ; Cegumark AB P.O. Box 53047 S-400 14 Göteborg, SE
Priority Data:
9904263-223.11.1999SE
Title (EN) SUPERCONDUCTING SUBSTRATE STRUCTURE AND A METHOD OF PRODUCING SUCH STRUCTURE
(FR) STRUCTURE DE SUBSTRAT SUPRACONDUCTEUR ET PROCEDE DE PRODUCTION DE CETTE STRUCTURE
Abstract:
(EN) The present invention relates to a superconducting substrate structure with a high temperature superconducting ground plane (2), for epitaxial growth of multilayers thereon. The substrate structure comprises a composite substrate structure with a first and a second substrate layer each covered by an HTS film which HTS films are bonded together through annealing to form a buried superconducting layer (2) wherein one of the substrate layers (1A') is polished to form a smooth insulating layer adjacent to an HTS layer (2). The invention also relates to a method of producing a superconducting substrate structure comprising the steps of arranging two substrate layers (1A',1B) on which HTS films are provided so in relation to each other that the HTS films come in close contact, applying a high pressure in an oxygen atmosphere and at an elevated temperature such that the HTS films are annealed and bonded together and subsequently polishing one of the substrate layers to form a smooth insulator (1A').
(FR) La présente invention concerne une structure de substrat supraconducteur présentant un plan de masse supraconducteur (2) à haute température, sur laquelle est exécuté un tirage épitaxial de multicouches. La structure de substrat comprend une structure de substrat composite présentant une première et une seconde couche de substrat chacune recouverte d'une couche mince HTS, lesquelles couches minces HTS sont liées ensemble par recuit pour former une couche supraconductrice enfouie (2), dans laquelle une des couches de substrat (1A') est polie pour former une couche isolante lisse adjacente à une couche HTS (2). L'invention concerne également un procédé de production d'une structure de substrat supraconducteur comprenant les étapes consistant à agencer deux couches de substrat (1A', 1B) sur lesquelles des couches minces HTS sont disposées dans une relation telle, les unes par rapport aux autres, que lesdites couches minces HTS viennent en contact étroit, à appliquer une haute pression dans une atmosphère d'oxygène et à température élevée, de manière que les couches minces HTS soient recuites et liées ensemble, et ensuite à polir une des couches de substrat pour former un isolant lisse (1A').
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)