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1. (WO2001038611) SILICON WAFER FOR EPITAXIAL WAFER, EPITAXIAL WAFER, AND METHOD OF MANUFACTURE THEREOF

Pub. No.:    WO/2001/038611    International Application No.:    PCT/JP2000/008204
Publication Date: Fri Jun 01 01:59:59 CEST 2001 International Filing Date: Wed Nov 22 00:59:59 CET 2000
IPC: C30B 15/00
H01L 21/20
Applicants: SHIN-ETSU HANDOTAI CO., LTD.

KIMURA, Akihiro

SATO, Hideki

KONO, Ryuji

KATO, Masahiro

TAMATSUKA, Masaro

Inventors: KIMURA, Akihiro

SATO, Hideki

KONO, Ryuji

KATO, Masahiro

TAMATSUKA, Masaro

Title: SILICON WAFER FOR EPITAXIAL WAFER, EPITAXIAL WAFER, AND METHOD OF MANUFACTURE THEREOF
Abstract:
A silicon wafer is provided that includes no voids in its surface for epitaxial growth. For example, a nitrogen-doped silicon wafer is heat-treated at 1100 to 1300°C in a non-oxidizing atmosphere, then at 700 to 1300°C in an oxidizing atmosphere while keeping the temperature above 700°C. The epitaxial wafer thus provided is free from epitaxial stacking faults.