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1. (WO2001038599) SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE, AND METHOD FOR PREPARING SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/038599 International Application No.: PCT/JP2000/008236
Publication Date: 31.05.2001 International Filing Date: 22.11.2000
Chapter 2 Demand Filed: 01.05.2001
IPC:
C03C 17/245 (2006.01) ,C04B 35/01 (2006.01) ,C04B 35/457 (2006.01) ,C23C 14/08 (2006.01) ,C23C 14/34 (2006.01)
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17
Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating
22
with other inorganic material
23
Oxides
245
by deposition from the vapour phase
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
453
based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
457
based on tin oxides or stannates
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
Applicants: INOUE, Kazuyoshi[JP/JP]; JP (UsOnly)
SHIBUYA, Tadao[JP/JP]; JP (UsOnly)
KAIJO, Akira[JP/JP]; JP (UsOnly)
IDEMITSU KOSAN CO., LTD.[JP/JP]; 1-1, Marunouchi 3-chome Chiyoda-ku Tokyo 100-8321, JP (AllExceptUS)
Inventors: INOUE, Kazuyoshi; JP
SHIBUYA, Tadao; JP
KAIJO, Akira; JP
Agent: WATANABE, Kihei; Daiichi NS Building 5th floor 32, Kanda Suda-cho 1-chome Chiyoda-ku Tokyo 101-0041, JP
Priority Data:
11/33373025.11.1999JP
11/33373125.11.1999JP
2000-11150513.04.2000JP
2000-11892420.04.2000JP
2000-2774104.02.2000JP
2000-4237821.02.2000JP
Title (EN) SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE, AND METHOD FOR PREPARING SPUTTERING TARGET
(FR) CIBLE DE PULVERISATION CATHODIQUE, OXYDE ELECTRO-CONDUCTEUR TRANSPARENT, ET PROCEDE D'ELABORATION D'UNE CIBLE DE PULVERISATION CATHODIQUE
Abstract:
(EN) A sputtering target containing at least indium oxide and zinc oxide, characterized in that an atomic ratio represented by In/(In + Zn) is a value in the range of 0.75 to 0.97, it contains a hexagonal, layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20, and the crystal grain diameter of the hexagonal, layered compound is 5 µm or less.
(FR) La présente invention concerne une cible de pulvérisation cathodique contenant au moins de l'oxyde d'indium et de l'oxyde de zinc. Elle se caractérise en ce que la valeur du rapport atomique In/(In + Zn) se situe dans une place entre 0,75 et 0,97, en ce qu'elle contient un composé hexagonal en couche représenté par In2O3(ZnO)m où m est un entier valant 2 à 20, et en ce que la diamètre du grain de cristal du composé hexagonal en couche n'excède pas 5 µm.
front page image
Designated States: CN, IN, JP, KR, SG, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)