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Machine translation
1. (WO2001038599) SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE, AND METHOD FOR PREPARING SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/038599    International Application No.:    PCT/JP2000/008236
Publication Date: 31.05.2001 International Filing Date: 22.11.2000
Chapter 2 Demand Filed:    01.05.2001    
IPC:
C03C 17/245 (2006.01), C04B 35/01 (2006.01), C04B 35/457 (2006.01), C23C 14/08 (2006.01), C23C 14/34 (2006.01)
Applicants: IDEMITSU KOSAN CO., LTD. [JP/JP]; 1-1, Marunouchi 3-chome, Chiyoda-ku, Tokyo 100-8321 (JP) (For All Designated States Except US).
INOUE, Kazuyoshi [JP/JP]; (JP) (For US Only).
SHIBUYA, Tadao [JP/JP]; (JP) (For US Only).
KAIJO, Akira [JP/JP]; (JP) (For US Only)
Inventors: INOUE, Kazuyoshi; (JP).
SHIBUYA, Tadao; (JP).
KAIJO, Akira; (JP)
Agent: WATANABE, Kihei; Daiichi NS Building, 5th floor, 32, Kanda Suda-cho 1-chome, Chiyoda-ku, Tokyo 101-0041 (JP)
Priority Data:
11/333730 25.11.1999 JP
11/333731 25.11.1999 JP
2000-27741 04.02.2000 JP
2000-42378 21.02.2000 JP
2000-111505 13.04.2000 JP
2000-118924 20.04.2000 JP
Title (EN) SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE, AND METHOD FOR PREPARING SPUTTERING TARGET
(FR) CIBLE DE PULVERISATION CATHODIQUE, OXYDE ELECTRO-CONDUCTEUR TRANSPARENT, ET PROCEDE D'ELABORATION D'UNE CIBLE DE PULVERISATION CATHODIQUE
Abstract: front page image
(EN)A sputtering target containing at least indium oxide and zinc oxide, characterized in that an atomic ratio represented by In/(In + Zn) is a value in the range of 0.75 to 0.97, it contains a hexagonal, layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20, and the crystal grain diameter of the hexagonal, layered compound is 5 µm or less.
(FR)La présente invention concerne une cible de pulvérisation cathodique contenant au moins de l'oxyde d'indium et de l'oxyde de zinc. Elle se caractérise en ce que la valeur du rapport atomique In/(In + Zn) se situe dans une place entre 0,75 et 0,97, en ce qu'elle contient un composé hexagonal en couche représenté par In2O3(ZnO)m où m est un entier valant 2 à 20, et en ce que la diamètre du grain de cristal du composé hexagonal en couche n'excède pas 5 µm.
Designated States: CN, IN, JP, KR, SG, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)