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Machine translation
1. (WO2001037385) CONTACT STRUCTURE FOR AN ELECTRIC II/VI SEMICONDUCTOR COMPONENT AND A METHOD FOR THE PRODUCTION OF THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/037385    International Application No.:    PCT/EP2000/011488
Publication Date: 25.05.2001 International Filing Date: 17.11.2000
Chapter 2 Demand Filed:    08.06.2001    
IPC:
H01L 21/443 (2006.01), H01L 33/40 (2010.01), H01S 5/042 (2006.01), H01S 5/327 (2006.01), H01L 33/28 (2010.01)
Applicants: TECHNISCHE UNIVERSITÄT BERLIN [DE/DE]; Strasse des 17. Juni 135, 10623 Berlin (DE) (For All Designated States Except US).
STRASSBURG, Matthias [DE/DE]; (DE) (For US Only).
SCHULZ, Oliver [DE/DE]; (DE) (For US Only).
POHL, Udo, W. [DE/DE]; (DE) (For US Only).
BIMBERG, Dieter [DE/DE]; (DE) (For US Only)
Inventors: STRASSBURG, Matthias; (DE).
SCHULZ, Oliver; (DE).
POHL, Udo, W.; (DE).
BIMBERG, Dieter; (DE)
Agent: EISENFÜHR, SPEISER & PARTNER; Pacelliallee 43/45, 14195 Berlin (DE)
Priority Data:
199 55 280.0 17.11.1999 DE
Title (DE) KONTAKTSTRUKTUR FÜR EIN ELEKTRISCH BETRIEBENES II/VI-HALBLEITERBAUELEMENT UND VERFAHREN ZU DEREN HERSTELLUNG
(EN) CONTACT STRUCTURE FOR AN ELECTRIC II/VI SEMICONDUCTOR COMPONENT AND A METHOD FOR THE PRODUCTION OF THE SAME
(FR) STRUCTURE DE CONTACT POUR UN COMPOSANT ELECTRIQUE A SEMICONDUCTEURS II/VI ET SON PROCEDE DE PRODUCTION
Abstract: front page image
(DE)Verfahren zur Herstellung von Kontakten für elektrisch betriebene II/VI-Halbleiterstrukturen (z.B. Laserdioden im blaugrünen Spektralbereich). Diese Kontate sind dadurch gekennzeichnet, dass sich Lithiumnitrid zwischen Halbleiterstruktur und den übrigen Kontaktschichten befindet.
(EN)The invention relates to a method for producing contacts for electric II/VI semiconductor structures (e.g. laser diodes in the blue-green spectral region). Said contacts are characterised in that lithium nitride is provided between the semiconductor structure and the other contact layers.
(FR)L'invention concerne un procédé pour réaliser des contacts destinés à des composants électriques à semiconducteurs II/VI (par exemple des diodes laser dans la plage spectrale bleu-vert). Ces contacts sont caractérisés en ce que du nitrure de lithium se trouve entre la structure à semiconducteurs et les autres couches de contact.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: German (DE)
Filing Language: German (DE)