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1. (WO2001037317) PLASMA PROCESSING SYSTEM WITH DYNAMIC GAS DISTRIBUTION CONTROL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/037317 International Application No.: PCT/US2000/031434
Publication Date: 25.05.2001 International Filing Date: 14.11.2000
Chapter 2 Demand Filed: 08.05.2001
IPC:
H01J 37/32 (2006.01)
Applicants: BAILEY, Andrew, D., III[US/US]; US (UsOnly)
SCHOEPP, Alan, M.[US/US]; US (UsOnly)
HEMKER, David, J.[US/US]; US (UsOnly)
WILCOXSON, Mark, H.[US/US]; US (UsOnly)
LAM RESEARCH CORPORATION[US/US]; P0557.PCT 4650 Cushing Parkway Fremont, CA 94538-6516, US (AllExceptUS)
Inventors: BAILEY, Andrew, D., III; US
SCHOEPP, Alan, M.; US
HEMKER, David, J.; US
WILCOXSON, Mark, H.; US
Agent: LEE, Michael; Beyer Weaver & Thomas, LLP P.O. Box 778 Berkeley, CA 94704, US
Priority Data:
09/470,23615.11.1999US
Title (EN) PLASMA PROCESSING SYSTEM WITH DYNAMIC GAS DISTRIBUTION CONTROL
(FR) SYSTEME DE TRAITEMENT AU PLASMA A REGULATION DE DISTRIBUTION DE GAZ DYNAMIQUE
Abstract: front page image
(EN) A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.
(FR) L'invention concerne un système de traitement au plasma comprenant une chambre de traitement au plasma assurant la conduite améliorée d'un processus de gravure. La chambre de traitement au plasma est reliée à un système de flux gazeux pouvant servir à réguler la libération des gaz dans différentes zones à l'intérieur de la chambre de traitement au plasma. En outre, le volume du gaz libéré, par exemple le débit du gaz, peut être réglé au moyen d'un mécanisme de réglage du flux gazeux. On peut ainsi régler à la fois la position et la quantité du gaz fourni à la chambre de traitement au plasma. La possibilité de régler la position et la quantité de gaz libéré dans la chambre de traitement au plasma permet ainsi une régulation améliorée de la distribution des constituants neutres qui, à son tour, améliore la conduite du processus de gravure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)