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Machine translation
1. (WO2001037296) SOLID STATE CAPACITORS AND METHODS OF MANUFACTURING THEM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/037296    International Application No.:    PCT/GB2000/004355
Publication Date: 25.05.2001 International Filing Date: 15.11.2000
Chapter 2 Demand Filed:    15.05.2001    
IPC:
H01G 9/00 (2006.01)
Applicants: AVX LIMITED [GB/GB]; Tantalum Division, Long Road, Paignton, Devon TQ4 7ER (GB) (For All Designated States Except US).
HUNTINGTON, David [GB/GB]; (GB) (For US Only)
Inventors: HUNTINGTON, David; (GB)
Agent: BROWN, Fraser, Gregory, James; fJ Cleveland, 40-43 Chancery Lane, London WC2A 1JQ (GB)
Priority Data:
9926975.5 15.11.1999 GB
Title (EN) SOLID STATE CAPACITORS AND METHODS OF MANUFACTURING THEM
(FR) CONDENSATEURS EN SEMI-CONDUCTEUR ET LEURS PROCEDES DE FABRICATION
Abstract: front page image
(EN)The present invention relates to the field of solid state capacitors. The present invention seeks to provide improved capacitors and improved methods of manufacturing such capacitors. According to one aspect of the present invention there is provided a method of manufacturing solid state capacitors comprising: providing an electrically conducting substrate (109); forming a plurality of porous bodies (105) comprising valve action material on a surface of the substrate, the bodies each having an upper surface distal to the substrate; forming an electrically insulating layer over the bodies; forming a conducting cathode layer over the insulating layer applied to the bodies; and dividing the substrate into capacitor portions, each portion comprising a body and a portion of substrate, characterised in that an end region of each body portion distal from the substrate is provided with a platform (106) which is locally raised with respect to the rest of the end region, the platform providing a cathode terminal site in the final capacitor, and the substrate portion providing an anode site.
(FR)L'invention concerne le domaine des condensateurs en semi-conducteur. L'invention concerne des condensateurs perfectionnés et des procédés améliorés de fabrication desdits condensateurs. Selon un aspect de l'invention, un procédé de fabrication de condensateurs en semi-conducteur consiste à : prévoir un substrat électro-conducteur (109) ; former plusieurs corps poreux (105) constitués d'un matériau à effet de valve, sur une surface du substrat, les corps comportant chacun une surface supérieure distale par rapport au substrat ; former une couche électro-isolante sur les corps ; former une couche cathode conductrice sur la couche isolante appliquée sur les corps ; et diviser le susbtrat en parties de condensateur, chaque partie comprenant un corps et une partie du substrat, une région terminale de chaque partie de corps distale par rapport au substrat étant dotée d'une plate-forme (106) localement surélevée par rapport au reste de la région terminale, la plate-forme constituant un site borne cathode dans le condensateur final, et la partie substrat formant un site anode.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)