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Machine translation
1. (WO2001037283) NONVOLATILE MEMORY AND STORAGE DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/037283    International Application No.:    PCT/JP1999/006435
Publication Date: 25.05.2001 International Filing Date: 18.11.1999
Chapter 2 Demand Filed:    18.11.1999    
IPC:
G11C 16/30 (2006.01)
Applicants: HITACHI, LTD. [JP/JP]; 6, Kanga Surugadai 4-chome Chiyoda-ku Tokyo 101-8010 (JP) (For All Designated States Except US).
HITACHI ULSI SYSTEMS CO., LTD. [JP/JP]; 22-1, Josuihon-cho 5-chome Kodaira-shi Tokyo 187-8522 (JP) (For All Designated States Except US).
SATO, Hiroshi [JP/JP]; (JP) (For US Only).
NODA, Satoshi [JP/JP]; (JP) (For US Only).
KIKKAWA, Hidekuni [JP/JP]; (JP) (For US Only).
OHSHIMA, Kazuyoshi [JP/JP]; (JP) (For US Only).
KISHIMOTO, Jiro [JP/JP]; (JP) (For US Only).
KUBONO, Shouji [JP/JP]; (JP) (For US Only)
Inventors: SATO, Hiroshi; (JP).
NODA, Satoshi; (JP).
KIKKAWA, Hidekuni; (JP).
OHSHIMA, Kazuyoshi; (JP).
KISHIMOTO, Jiro; (JP).
KUBONO, Shouji; (JP)
Agent: OBINATA, Tomio; Yamamoto Building 2F 4, Kagurazaka 3-chome Shinjuku-ku Tokyo 162-0825 (JP)
Priority Data:
Title (EN) NONVOLATILE MEMORY AND STORAGE DEVICE
(FR) MEMOIRE NON VOLATILE ET DISPOSITIF DE STOCKAGE
Abstract: front page image
(EN)A nonvolatile memory including memory cells with floating gates is capable of write and erase operations when a high external voltage such as 3.3 V is applied to its power supply terminal. When a low external voltage such as 1.8 or 2.5 V is applied to the power supply terminal, on the other hand, the nonvolatile memory can only be read. The nonvolatile memory is suitable for storage of a portable electronic device because it requires shorter write time and less power for reading.
(FR)L'invention concerne une mémoire non volatile comprenant des cellules de mémoire à grilles flottantes, laquelle mémoire permet des opérations d'écriture et de lecture lorsqu'on applique une tension indépendante élevée, par exemple 3,3 V, aux bornes de son bloc d'alimentation. Par contre, lorsqu'on applique une tension indépendante basse, par exemple de 1,8 à 2,5 V, aux bornes du bloc d'alimentation, la mémoire non volatile peut uniquement être lue. La mémoire volatile selon l'invention convient au stockage d'un dispositif électronique portable car elle nécessite un temps d'écriture court et une puissance de lecture réduite.
Designated States: CN, JP, KR, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)