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1. (WO2001036719) SILICON SINGLE CRYSTAL WAFER AND PRODUCTION METHOD THEREOF AND SOI WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/036719 International Application No.: PCT/JP2000/007809
Publication Date: 25.05.2001 International Filing Date: 07.11.2000
IPC:
C30B 15/00 (2006.01) ,H01L 21/322 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322
to modify their internal properties, e.g. to produce internal imperfections
Applicants:
IIDA, Makoto [JP/JP]; JP (UsOnly)
KIMURA, Masanori [JP/JP]; JP (UsOnly)
SHIN-ETSU HANDOTAI CO., LTD. [JP/JP]; 4-2, Marunouchi 1-chome Chiyoda-ku, Tokyo 100-0005, JP (AllExceptUS)
Inventors:
IIDA, Makoto; JP
KIMURA, Masanori; JP
Agent:
YOSHIMIYA, Mikio; Uenosansei Bldg. 4F 6-4, Motoasakusa 2-chome Taito-ku, Tokyo 111-0041, JP
Priority Data:
11/32248712.11.1999JP
Title (EN) SILICON SINGLE CRYSTAL WAFER AND PRODUCTION METHOD THEREOF AND SOI WAFER
(FR) PLAQUETTE EN SILICIUM MONOCRISTALLIN, PROCEDE DE PRODUCTION ASSOCIE ET PLAQUETTE SOI
Abstract:
(EN) A silicon single crystal wafer grown by a CZ method, wherein nitrogen is doped, the entire surface thereof consists of an N-region and its interstitial oxygen concentration is up to 8 ppma, or, wherein nitrogen is doped, at least void type defects and dislocation clusters have been removed from the entire surface and its interstitial oxygen concentration is up to 8 ppma; and a production method thereof; whereby providing a defect-free silicon single crystal wafer having void type defects and dislocation clusters removed under stable, easy-to-control production conditions with a wide control range and consisting of an N-region on the entire surface thereof, and providing a production method thereof.
(FR) L'invention concerne une plaquette en silicium monocristallin tiré suivant un procédé CZ. L'azote est dopé, toute la surface de la plaquette consiste en une zone N et sa teneur en oxygène interstitielle est au maximum de 8 ppma, ou alors, l'azote est dopé, les défauts du type vide et grappes de dislocation ont été enlevés de toute la surface et sa teneur en oxygène interstitielle est au maximum de 8 ppma. L'invention concerne également un procédé de production associé. La plaquette en silicium monocristallin est sans défaut; les défauts du type vide et grappes de dislocation ont été enlevés dans des conditions de production stables, faciles à contrôler avec une vaste plage de contrôle, la plaquette consistant en une zone N sur toute sa surface. L'invention traite enfin d'un procédé de production associé.
Designated States: KR, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)