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1. (WO2001036718) SILICON WAFER AND PRODUCTION METHOD THEREOF AND EVALUATION METHOD FOR SILICON WAFER

Pub. No.:    WO/2001/036718    International Application No.:    PCT/JP2000/007808
Publication Date: Sat May 26 01:59:59 CEST 2001 International Filing Date: Wed Nov 08 00:59:59 CET 2000
IPC: C30B 15/00
H01L 21/322
Applicants: SHIN-ETSU HANDOTAI CO., LTD.

TAKENO, Hiroshi

SHIGENO, Hideki

IIDA, Makoto

Inventors: TAKENO, Hiroshi

SHIGENO, Hideki

IIDA, Makoto

Title: SILICON WAFER AND PRODUCTION METHOD THEREOF AND EVALUATION METHOD FOR SILICON WAFER
Abstract:
A silicon wafer obtained by slicing a silicon single-crystal bar grown by a CZ method by doping or not doping nitrogen, wherein the entire surface of the silicon wafer is either one of an NV region, an NV region containing an OSF ring region and an OSF ring region, and its interstitial oxygen concentration is up to 14 ppma; and a production method thereof; and a method of evaluating a defective region in a silicon wafer; whereby providing a silicon wafer that can ensure a stable oxygen deposition without depending on a crystal position and a device process, and a production method thereof. It is also possible to evaluate a defective region in a silicon wafer where a lifting condition is unknown and a defective region is not identified.