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1. (WO2001035518) CHARGE PUMP FOR GENERATING HIGH VOLTAGES FOR SEMICONDUCTOR CIRCUITS

Pub. No.:    WO/2001/035518    International Application No.:    PCT/DE2000/003874
Publication Date: Fri May 18 01:59:59 CEST 2001 International Filing Date: Sat Nov 04 00:59:59 CET 2000
IPC: H02M 3/07
Applicants: INFINEON TECHNOLOGIES AG
BLOCH, Martin
Inventors: BLOCH, Martin
Title: CHARGE PUMP FOR GENERATING HIGH VOLTAGES FOR SEMICONDUCTOR CIRCUITS
Abstract:
The invention relates to a charge pump for generating high voltages for integrated semiconductor circuits. Said charge pump comprises a plurality of pump stages with at least one power transistor (M1x) each for generating a pump voltage (Vpmp) on a power track. The inventive charge pump is further characterized in that the power transistor (M1x) has a freely switchable bulk terminal (B) with which a trough-shaped structure of the power transistor can be maintained at a predetermined potential via a trough charge track that is substantially separate from the power track.