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Machine translation
1. (WO2001035469) THIN-FILM PIEZOELECTRIC DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/035469    International Application No.:    PCT/JP2000/002960
Publication Date: 17.05.2001 International Filing Date: 09.05.2000
IPC:
H03H 3/04 (2006.01), H03H 9/17 (2006.01)
Applicants: MITSUBISHI DENKI KABUSHIKI KAISHA [JP/JP]; 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 100-8310 (JP) (For All Designated States Except US).
MISU, Koichiro [JP/JP]; (JP) (For US Only).
YOSHIDA, Kenji [JP/JP]; (JP) (For US Only).
IBATA, Koji [JP/JP]; (JP) (For US Only).
WADAKA, Shusou [JP/JP]; (JP) (For US Only).
NAGATSUKA, Tsutomu [JP/JP]; (JP) (For US Only).
UCHIKAWA, Fusaoki [JP/JP]; (JP) (For US Only).
YAMADA, Akira [JP/JP]; (JP) (For US Only).
MAEDA, Chisako [JP/JP]; (JP) (For US Only)
Inventors: MISU, Koichiro; (JP).
YOSHIDA, Kenji; (JP).
IBATA, Koji; (JP).
WADAKA, Shusou; (JP).
NAGATSUKA, Tsutomu; (JP).
UCHIKAWA, Fusaoki; (JP).
YAMADA, Akira; (JP).
MAEDA, Chisako; (JP)
Agent: TAZAWA, Hiroaki; Daito Building 7F, 7-1, Kasumigaseki 3-chome, Chiyoda-ku, Tokyo 100-0013 (JP)
Priority Data:
11/321594 11.11.1999 JP
Title (EN) THIN-FILM PIEZOELECTRIC DEVICE
(FR) DISPOSITIF PIEZO-ELECTRIQUE A FILM MINCE
Abstract: front page image
(EN)A thin-film piezoelectric device comprises a silicon substrate (1); a dielectric film (21) including a silicon nitride film (16) formed on the silicon substrate (1) and a silicon oxide film (2) formed on the silicon nitride film (16); a lower electrode (3) formed on the dielectric film (21); a piezoelectric film (17) formed on the lower electrode (3); and an upper electrode (5) formed on the piezoelectric film (17). To form a via hole (6), that part of the silicon substrate (1) opposed to the area including the upper electrode (5) is removed from the bottom of the silicon substrate (1) to the interface with the silicon nitride film (16).
(FR)L'invention porte sur un dispositif piézo-électrique à film mince comportant: un substrat de silicium (1); un film diélectrique (21) comprenant un film (16) de nitrure de silicium formé sur le substrat de silicium (1); un film (2) d'oxyde de silicium formé sur le (2) film de nitrure de silicium (16); une électrode inférieure (3) formée sur le film diélectrique (21); un film piézo-électrique (17) formé sur l'électrode inférieure (3); et une électrode supérieure (5) formée sur le film piézo-électrique (17). Pour former un trou (6) d'interconnexion, la partie du substrat de silicium (1) opposée à la surface comprenant l'électrode supérieure (5), est éliminée de la base du substrat de silicium (1) jusqu'à l'interface avec le film de nitrure de silicium (16).
Designated States: CN, KR, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)