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1. (WO2001035469) THIN-FILM PIEZOELECTRIC DEVICE

Pub. No.:    WO/2001/035469    International Application No.:    PCT/JP2000/002960
Publication Date: Fri May 18 01:59:59 CEST 2001 International Filing Date: Wed May 10 01:59:59 CEST 2000
IPC: H03H 3/04
H03H 9/17
Applicants: MITSUBISHI DENKI KABUSHIKI KAISHA

MISU, Koichiro

YOSHIDA, Kenji

IBATA, Koji

WADAKA, Shusou

NAGATSUKA, Tsutomu

UCHIKAWA, Fusaoki

YAMADA, Akira

MAEDA, Chisako

Inventors: MISU, Koichiro

YOSHIDA, Kenji

IBATA, Koji

WADAKA, Shusou

NAGATSUKA, Tsutomu

UCHIKAWA, Fusaoki

YAMADA, Akira

MAEDA, Chisako

Title: THIN-FILM PIEZOELECTRIC DEVICE
Abstract:
A thin-film piezoelectric device comprises a silicon substrate (1); a dielectric film (21) including a silicon nitride film (16) formed on the silicon substrate (1) and a silicon oxide film (2) formed on the silicon nitride film (16); a lower electrode (3) formed on the dielectric film (21); a piezoelectric film (17) formed on the lower electrode (3); and an upper electrode (5) formed on the piezoelectric film (17). To form a via hole (6), that part of the silicon substrate (1) opposed to the area including the upper electrode (5) is removed from the bottom of the silicon substrate (1) to the interface with the silicon nitride film (16).